Physics and Simulation of Optoelectronic Devices XXVIII 2020
DOI: 10.1117/12.2547327
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Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach

Abstract: The growth of reliable III-V quantum well (QW) lasers on silicon remains a challenge as yet unmastered due to the issue of carrier migration into dislocations. We have recently compared the functionality of quantum dots (QDs) and QWs in the presence of high dislocation densities using rate equation travelling-wave simulations, which were based on 10-m large spatial steps, and thus only allowed the use of effective laser parameters to model the performance degradation resulting from dislocation-induced carrier… Show more

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Cited by 2 publications
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