Impact of geometry on transport properties of armchair graphene nanoribbon heterojunction

Zhang, Weixiang; Basaran, Cemal; Ragab, Tarek

doi:10.1016/j.carbon.2017.09.005

Cited by 29 publications

(19 citation statements)

References 39 publications

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“… Homogeneous junctions ( A | A ) 1. Structure: interface, width, nanohole and thickness aGNR|zGNR M/S [ 41 ] (m)aGNR|(n)aGNR Semi-M/S [ 43 ] Black–blue phosphorene S/S types I, II [ 46 ] (m)GeP 3 |(n)GeP 3 S/S type II [ 47 ] GNM/graphene S/Semi-M [ 55 ] Monolayer–multilayer MoS 2 S/S type I [ 56 ] Multilayer MoSe 2 S/S type II [ 151 ] 2. Doping and passivation: substituting doping, surface adsorption, monohydrogenated, dihydrogenated n -doped/ p -doped GNR S/S type III [ 63 ] n -doped GNR/GNR ( n -doped GNR) S/S type II [ 131 ] H 2 -doped (m)zGNR–H M/S [ 75 ] O/zGNR–H/zGNR M/S [ 80 ] H 2 –(m)zGNR–H/H–(n)zGNR–H M/S [ 82 ] zMoS 2 NR–H/zMoS 2 NR M/S [ …”

Section: The Properties Of Lhssmentioning

confidence: 99%

“…When the widths of the aGNRs are 3 p and 3 p + 1, the aGNRs behave as semiconductors, whose bandgaps range from 0.4 to 2.5 eV; when the width is 3 p + 2, the aGNRs behaves as a semimetal, whose bandgaps range from 0 to 0.3 eV ( p = 1, 2, 3, …). An undoped armchair graphene heterojunction has been proposed with left and right parts having different widths, where the left part is a semimetal and the right part is a semiconductor [ 43 ]. The heterojunction has rectification effect induced by the interface, which is similar to the Schottky barrier, and the rectification ratio is affected by the ribbon width (left width/right width).…”

Section: The Properties Of Lhssmentioning

confidence: 99%

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Recent Advances in 2D Lateral Heterostructures

et al. 2019

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HIGHLIGHTS• The tunable mechanisms of lateral heterostructures on both homogeneous junctions and heterogeneous junctions are summarized.• Electronic and photoelectronic devices with lateral heterostructures have been discussed.• Different types of contacts of 2D lateral heterostructures are classified. • Recent developments in synthesis and nanofabrication technologies of 2D lateral heterostructures are reviewed. ABSTRACT Recent developments in synthesis and nanofabrication technologies offer the tantalizing prospect of realizing various applications from twodimensional (2D) materials. A revolutionary development is to flexibly construct many different kinds of heterostructures with a diversity of 2D materials. These 2D heterostructures play an important role in semiconductor and condensed matter physics studies and are promising candidates for new device designs in the fields of integrated circuits and quantum sciences. Theoretical and experimental studies have focused on both vertical and lateral 2D heterostructures; the lateral heterostructures are considered to be easier for planner integration and exhibit unique electronic and photoelectronic properties. In this review, we give a summary of the properties of lateral heterostructures with homogeneous junction and heterogeneous junction, where the homogeneous junctions have the same host materials and the heterogeneous junctions are combined with different materials. Afterward, we discuss the applications and experimental synthesis of lateral 2D heterostructures. Moreover, a perspective on lateral 2D heterostructures is given at the end.

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Section: The Properties Of Lhssmentioning

confidence: 99%

Section: The Properties Of Lhssmentioning

confidence: 99%

Recent Advances in 2D Lateral Heterostructures

et al. 2019

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“…It is well known that the bandgap of graphene and be induced by tailoring it into nanoribbons (GNRs). [38,39,[44][45][46] Until 2015, Chen et al had experimentally demonstrated a 7-13-7 width-modulated armchair GNR (AGNR) HJ via the bottom-up synthesis method (Figure 3a). [37] Naturally, a lateral HJ can be constructed by connecting the GNRs with different widths.…”

Section: Lateral Heterojunctionsmentioning

confidence: 99%

“…Although this kind of GNR HJs had been investigated and used in TFET designs theoretically, the realization was not an easy task, because of the bad band width control ability in GNR technologies. Besides, this HJ constructing method was also controversial in simulations since the eigenstates in one segment might penetrate into the others . Until 2015, Chen et al.…”

Section: Heterojunction Constructionmentioning

confidence: 99%

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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“…Since in electronic devices, semiconductor materials with a tunable band gap is required it was necessary to overcome this issue. Utilizing these materials as nanoribbons with a desired width yields a nonzero bandgap which is tunable [8,11,12,[19][20][21]. Graphene, germanene and silicene nanoribbons are candidates for next generation devices due to significant electronic properties such as direct bandgap and light carrier effective mass [2,[22][23][24], high carrier mobility and high current density [23,[25][26][27].…”

Section: Introductionmentioning

confidence: 99%

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Samipour

Dideban

Heidari

2019

ECS J. Solid State Sci. Technol.

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In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors (TFETs) is examined. The simulations are performed using the combination of density functional theory (DFT) and nonequilibrium Green's function (NEGF) formalis m. It was observed that using high-k dielectric gate material increases the ON-state current while the combination of hetero-dielectric gate material and gate-drain underlap suppresses the ambipolar current and improves the ON-state current. In addition, the effect of various hetero-junctions in the source region on the performance of GeNR-TFET was investigated. Due to the dependency between the width and energy bandgap in GeNR, utilizing a small bandgap in the source improves ON-state current and its ambipolar behavior.

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Impact of geometry on transport properties of armchair graphene nanoribbon heterojunction

Cited by 29 publications

References 39 publications

Recent Advances in 2D Lateral Heterostructures

Recent Advances in 2D Lateral Heterostructures

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

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