Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Kim, Jongmin; Kim, Duhwan; Jo, Young‐Heon; Han, Je Ho; Woo, Hyeonseok; Kim, Hyungsang; Kim, K.K.; Hong, Jin Pyo; Im, Hyunsik

doi:10.1016/j.tsf.2015.05.002

Cited by 25 publications

(11 citation statements)

References 37 publications

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“…The use of insulating 2D materials for application in ReRAM technologies has been explored by various research groups . In 2016, Qian and co‐workers reported on flexible memory devices based on vertical MIM structures consisting of a ≈3 nm thick CVD‐grown h‐BN film sandwiched between Cu (cathode) and Ag (anode) electrodes (Figure e,f) .…”

Section: D Materials “Beyond” Graphene For Resistive Nvmsmentioning

confidence: 99%

Nonvolatile Memories Based on Graphene and Related 2D Materials

et al. 2019

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The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high‐capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon‐based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low‐cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random‐access, flash, magnetic and phase‐change memories. The physical and chemical mechanisms underlying the switching of GRM‐based memory devices studied in the last decade are discussed. Although at this stage most of the proof‐of‐concept devices investigated do not compete with state‐of‐the‐art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

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Section: D Materials “Beyond” Graphene For Resistive Nvmsmentioning

confidence: 99%

Nonvolatile Memories Based on Graphene and Related 2D Materials

et al. 2019

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“…Though reversible resistive switching (RS) is not novel: it has been observed in various insulating oxides sandwiched by metal electrodes since the 1970s 1 2 3 4 5 6 7 8 9 10 11 , there is renewed interest in using the RS phenomena as an operating principle for new-functional nonvolatile memory (often referred to as ReRAM) applications. According to the way reversible RS phenomena are controlled, either by current magnitude or by voltage bias polarity, the character of RS is grouped into two categories: unipolar or bipolar.…”

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confidence: 99%

Switching Power Universality in Unipolar Resistive Switching Memories

Kim

Jung

Kim

et al. 2016

Sci Rep

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We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R−β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.

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“…[108,216] Ref. [107] observed that inserting CVD-SLG in Al/WO3/Al structures stabilized the characteristics of the RRAM devices (see Figs. 4a,b), reducing the variability of the set/reset voltages and currents, as well as enhancing the endurance.…”

Section: Blocking Layer For Atomic Diffusionmentioning

confidence: 99%

“…2b), which is by far the most widespread and competitive device architecture developed until now for RS-based NVMs. [107][108][109][110][111][112] The core cell of state-of-the-art RRAMs consist of a matrix of vertically aligned MIM structures [34][35] (see Fig. 2b).…”

Section: Device Architecturementioning

confidence: 99%

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Graphene and Related Materials for Resistive Random Access Memories

Hui

Grustan‐Gutierrez

Long

et al. 2017

Adv Elect Materials

202

191

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Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAM). Here, we analyze, classify and evaluate this emerging field, and summarize the performance of the RRAM prototypes using GRMs. Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers.Graphene can be used as electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration. GRMs-based RRAMs fit some non-2 volatile memory technological requirements like low operating voltages <1V and switching times <10 ns but others, like retention >10 years, endurance >10 9 cycles and power consumption ~10 pJ/transition still remain a challenge. More technologyoriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization. List of acronymsa-C amorphous-Carbon ALD Atomic Layer Deposition APTES 3-Aminopropyltriethoxysilane BD Dielectric Breakdown BLG Bilayer Graphene BP Black Phosphorous CAFM Conductive Atomic Force Microscopy CBRAM Conductive Bridge Random Access Memory CF Conductive Filament CL Current Limitation CMOS Complementary Metal Oxide Semiconductor CVD Chemical Vapor Deposition CVS Constant Voltage Stresses

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Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Cited by 25 publications

References 37 publications

Nonvolatile Memories Based on Graphene and Related 2D Materials

Nonvolatile Memories Based on Graphene and Related 2D Materials

Switching Power Universality in Unipolar Resistive Switching Memories

Graphene and Related Materials for Resistive Random Access Memories

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