Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Gudovskikh, A. S.; Kudryashov, D. A.; Baranov, Artem; Uvarov, A. V.; Морозов, И. А.; Maksimova, A. A.; Vyacheslavova, Ekaterina; Kirilenko, D. A.; Можаров, А. М.

doi:10.1002/pssa.202100339

Cited by 5 publications

(3 citation statements)

References 29 publications

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“…In the case of the NW, the oxide layer at the sidewall surface could produce an inversion of the conductivity type . The inversion of the conductivity occurs when the NW diameter is lower compared to the space charge region width . In our case, the estimated value of the space charge region width is about 1 μm, being much higher compared to the NW diameter.…”

Section: Results and Discussionmentioning

confidence: 60%

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Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Kondrat'ev¹,

Морозов²,

Vyacheslavova

et al. 2022

ACS Appl. Nano Mater.

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Nanowires represent numerous opportunities for nanoelectronics and sensorics, while metal contact fabrication makes the device development rather challenging. Here, we demonstrate that silicon (Si) nanowires deposited on interdigital metal contacts via simple drop casting exhibit an abrupt increase in conductivity upon exposure to ammonia vapors and aqueous solutions due to adsorption of the analyte species. To reduce the noise of the DC resistance measurements lacking ohmic conductivity, we exploit electronic impedance spectroscopy. The resistive response is found to be dependent on the ammonia content in vapor and liquid matter. The results demonstrate a detection limit of 4 μmol•L −1 (80 ppb), a sensitivity of 0.2% μmol −1 •l (0.01%•ppb −1 ), and applicability for the low-concentration detection of up to 400 μmol•L −1 (8 ppm) ammonia in aqueous solutions both directly and indirectly with a response rate of up to 0.43%•s −1 and a recovery rate of 0.31%•s −1 and show selectivity to oxidizing species. Thus, we demonstrate that the use of semiconductor nanowires in adsorption sensorics does not require the fabrication of ohmic contacts and present a simple fabrication protocol perspective for the development of highly sensitive room-temperature multi-environment sensors.

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Section: Results and Discussionmentioning

confidence: 60%

“…59 The inversion of the conductivity occurs when the NW diameter is lower compared to the space charge region width. 60 In our case, the estimated value of the space charge region width is about 1 μm, being much higher compared to the NW diameter. Thus, an inversion of the conductivity type is highly probable.…”

Section: Ammonia Vapor Testsmentioning

confidence: 51%

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Kondrat'ev¹,

Морозов²,

Vyacheslavova

et al. 2022

ACS Appl. Nano Mater.

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“…Once this effect is not fully compensated by the increased J SC , this will lead to a decreased V OC (V OC ¼ kT ln (I SC /I 0 )). [40][41][42][43] Indeed, light trapping is more efficient with increased SiNW density. [6,44,45] Figure 5b shows a step increase in J SC , but it flattens out for SiNW densities above 2.2 Â 10 8 cm À2 reaching a maximum of 3.9 mA cm À2 for a density of 4.3 Â 10 8 cm À2 .…”

Section: Optimizing Sinw Density For Triple-junction Devicesmentioning

confidence: 99%

Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage

2022

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When solar cells are used as the photoanode for direct water splitting, the output voltage required typically exceeds that of a single‐junction photovoltaic device. Toward this application, in this work, triple radial junction silicon nanowire (3RJ SiNW) solar cells are fabricated via a plasma‐assisted vapor‐liquid‐solid method using hydrogenated amorphous silicon (a‐Si:H) for all the absorber layers, as well as for the doped ones. A high open‐circuit voltage (VOC) of 2.05 V, short‐circuit current density (JSC) of 3.8 mA cm−2, and power conversion efficiency of 4.4% are obtained for solar cells with areas of 0.03 cm2 by optimizing the density of SiNWs grown on ZnO:Al/Ag/Corning glass substrates. For lower‐efficiency devices, however, VOC values as high as 2.2 V are consistently achieved. At these higher voltages, large variations in JSC are observed, attributed to small local variations in SiNW density. Herein, for the first time, the excellent potential of 3D radial junction solar cells for applications requiring high voltages and high surface areas, such as water splitting is demonstrated.

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Interface properties study of black silicon solar cells with front surface a-Si:H/c-Si heterojunction

Gudovskikh,

Baranov,

Uvarov

et al. 2024

J. Phys. D: Appl. Phys.

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The exceptionally low reflectance of black silicon across a broad wavelength range makes it an intriguing surface texture for solar cell applications. Silicon heterojunction (SHJ) solar cells fabricated on black silicon (Si) formed by dry reactive ion etching (RIE) using inductive coupled plasma (ICP) on n-type Si are explored. The study is focused on the properties of the a-Si:H/c-Si interface, being a key issue for the photovoltaic performance of SHJ. Deep-level transient spectroscopy (DLTS) detected no radiation defect in Si after the etching. The surface of black Si was passivated with an intrinsic a-Si:H layer, followed by the deposition of p-type and n-type a-Si:H on the front and back sides, respectively. The SHJ solar cell photovoltaic performance based on black Si is strongly influenced by defect density at the a-Si:H/Si interface. Admittance spectroscopy and effective charge carrier lifetime measurements demonstrate that interface defect density decreases with the increase of (i)a-Si:H thickness. The value of 0.75 ms effective charge carrier lifetime was reached for single (i) a-Si:H layer passivation and 0.25 ms when (p)a-Si:H was deposited over the intrinsic a-Si:H layer. The measured open circuit voltage (VOC) values for the SHJ solar cells increase with the (i)a-Si:H layer thickness reaching 658 mV. However, the fill factor decreases with increasing (i) a-Si:H layer thickness, limiting the efficiency at the maximum value below 14% due to the thickness uniformity of the a-Si:H layer. The development of conformal growth of a-Si:H is a key issue for further improvement of black Si heterojunction solar cell photovoltaic performance. 

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Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Cited by 5 publications

References 29 publications

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage

Interface properties study of black silicon solar cells with front surface a-Si:H/c-Si heterojunction

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