Impact of Leveler Molecular Weight and Concentration on Damascene Copper Electroplating

Abstract

The impact of leveler molecular weight and concentration on bottom-up fill rate, leveling activity, electrolyte polarization, and copper properties of films formed during damascene copper electroplating has been studied. A model leveler, polyvinylpyrrolidone (PVP), at molecular weights ranging from 3,500 to 1,300,000 and at concentrations from 1 to 20 mg/L was found to be effective in reducing excessive plated thickness over superfilling features, while resulting in little loss of bottom-up fill performance. Intermediate PVP molecular weights were most effective in reducing overplating, while the higher molecular weights enhanced fill performance. This behavior is explained in terms of leveler diffusion into features as a function of molecular weight, and leveler impact on electrolyte polarization. Incorporation of sulfur, carbon, and chloride in the plated films increased with increasing PVP concentration and molecular weight. This suggests leveling is accomplished by removal of adsorbed accelerator from the from the film surface during plating by co-deposition with leveler.

Isotope abundance ratio measurements using femtosecond laser ablation ionization mass spectrometry

“…Similar to the NIST standard, the linear correlations between the Mg ( Figure 6E) and Ni ( Figure 6F) isotopes improve the selection of data points for the isotope analysis. In the high peak intensity range, the 24 Mg isotope signals are observed to be underestimated, followed by increased scattering of the data. The correlation becomes more confined after spectra filtering.…”

“…23 Depth profiling methods are common, and several analytical methods demonstrate their utility in analyses of the element distribution at surfaces and interfaces. The field of application ranges from the semiconductor industry, which, among other things, is interested to identify possible impurities within high purity functional materials of high performance, 24,25 to geochemical and geochronology analysis in space and planetology research,. 26,27 By applying the depth profiling technique, the chemical composition of micrometer-sized inclusions can be well-isolated from the host elements, without extensive sample preparation.…”

“…Mg isotope abundances determined on dark inclusions can be affected as well by isobaric interferences due to possible presence of C 2 clusters and C 2 H and C 2 H 2 molecules. Such a presence would show as an increased abundance of the24 Mg isotope and would F I G U R E 1 0 The single pulse (SP) and double pulse (DP) mass spectra of trevorite (upper panel) and dark inclusion in the aragonite phase (lower panel). Locations of clusters and molecular ions are indicated in the figure, as they can be identified in the SP mass spectra.…”

UV post‐ionization laser ablation ionization mass spectrometry for improved nm‐depth profiling resolution on Cr/Ni reference standard

“…Understanding of the chemical composition at surfaces and below, i.e., depth profiles at very localized areas on the sample is of high interest in multiple disciplines. The field of application ranges from the semiconductor industry, which, amongst others, is interested to evidence possible impurities within high purity functional materials to improve their interconnect technology, 1,2 and the integrity of chemical interfaces, to geochemical and geochronological analysis in space and planetology research, where the elemental and isotope constitution of a heterogeneous specimen provides relevant information about ongoing evolutionary planetary processes 3,4 . Many functional materials have particular chemical and physical properties associated with specific surface‐confined thin films that differ from the bulk material.…”

Review—Laser Ablation Ionization Mass Spectrometry (LIMS) for Analysis of Electrodeposited Cu Interconnects

“…[1][2][3][4][5][6][7] Incorporation of minor and even trace amounts of the employed organic additives in the deposited material as a result of the plating process is, however, an important drawback that might undermine the reliability, performance and lifespan of the manufactured interconnects. [8][9][10][11] Hence new plating formulations with functionalities beyond the standard concept of Damascene processing that prevent or minimize such additive embedment have been designed and implemented. [12][13][14][15] In this context, accurate and comprehensive characterization of the interconnect features manufactured with these improved plating additive packages requires their quantitative chemical analysis with a spatial resolution at micro-and nanometer level.…”