Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET

Basak, Arighna; Deyasi, Arpan; Sarkar, Angsuman

doi:10.1007/978-981-19-6301-8_12

Cited by 3 publications

(1 citation statement)

References 39 publications

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“…All the notations are carried their usual meaning and calculated from [43][44][45][46]. Figure 11 analyses the comparison of f T with V fg for UAJDMDG, JDMDG and UAJDG structures.…”

Section: Resultsmentioning

confidence: 99%

Impact of underlap layer on DC and RF/analog performance of asymmetric junctionless dual material double gate MOSFET for low-power analog amplifier design

Basak,

Deyasi,

Sarkar

2024

Phys. Scr.

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Impact of underlap layer is analytically investigated on asymmetric junctionless dual material double gate MOSFET (AJDMDG) to reduce subthreshold slope and threshold voltage, which are two essential requirements with shrinking device dimensions to avoid short channel effects. The model utilizes two-dimensional Poisson’s equation with parabolic approximation for determining electrical parameters where dimensional ranges are kept within fabrication limit. Excellent accuracy is found for the obtained analytical outcome, when compared with results obtained from TCAD ATLAS simulator. Comparative study is extended for conventional junctionless DMDG (JDMDG) and underlap asymmetric junctionless single material DGFET (UAJDG) device, having identical dimensional parameters and biasing ranges; where the present structure exhibits superior performance in terms of threshold voltage, subthreshold slope and DIBL of 34.57%, 62.85% and 69.85% respectively compared to JDMDG and 12.50%, 26.08% and 40.25% respectively w.r.t UAJDG structure. Supremacy of the proposed architecture is further established with RF/analog Fig.ures of Merit (FOMs), which are essential for designing low power analog amplifier.

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“…All the notations are carried their usual meaning and calculated from [43][44][45][46]. Figure 11 analyses the comparison of f T with V fg for UAJDMDG, JDMDG and UAJDG structures.…”

Section: Resultsmentioning

confidence: 99%