International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
DOI: 10.1109/iedm.1998.746376
|View full text |Cite
|
Sign up to set email alerts
|

Impact of neutron flux on soft errors in MOS memories

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Publication Types

Select...
4
2
1

Relationship

0
7

Authors

Journals

citations
Cited by 13 publications
(2 citation statements)
references
References 5 publications
0
2
0
Order By: Relevance
“…Flash memory superiority over SRAM was also observed by Doucin [4] and by Eto [5]. Doucin fmds Flash cross section to be four orders of magnitude smaller than SRAM and DRAM.…”
Section: Introductionmentioning
confidence: 65%
“…Flash memory superiority over SRAM was also observed by Doucin [4] and by Eto [5]. Doucin fmds Flash cross section to be four orders of magnitude smaller than SRAM and DRAM.…”
Section: Introductionmentioning
confidence: 65%
“…At the microscopic level of system design, such as memory chips, components become more complex each generation. Density, size and geometry combine to make component cross-sections grow [7]. At the macroscopic scale, large multiprocessor and multi-FPGA systems are becoming common.…”
Section: Introductionmentioning
confidence: 99%