“…Energetic plasma treatment commonly removes organic capping material (e.g., CTAB bilayer) to improve surface modification in AuNPs. [10][11][12][13] We reported the morphological and spectral changes of single AuNRs for various plasma treatment times in our previous study. 14 Furthermore, we demonstrated that the silica coating in AuNRs@mSiO 2 enhances the AuNR core stability against oxygen plasma treatment.…”
This study investigated the amalgamation of gold nanorods (AuNRs) exposed to Hg(II) solution and its effects on structural and spectral changes in single AuNRs using scanning electron microscopy and total...
“…Energetic plasma treatment commonly removes organic capping material (e.g., CTAB bilayer) to improve surface modification in AuNPs. [10][11][12][13] We reported the morphological and spectral changes of single AuNRs for various plasma treatment times in our previous study. 14 Furthermore, we demonstrated that the silica coating in AuNRs@mSiO 2 enhances the AuNR core stability against oxygen plasma treatment.…”
This study investigated the amalgamation of gold nanorods (AuNRs) exposed to Hg(II) solution and its effects on structural and spectral changes in single AuNRs using scanning electron microscopy and total...
“…This O atoms create the D and D 0 peaks of graphene, which are similar to those of the O 2 plasma-treated graphene. 33,34 It is also accurately demonstrated that Al generated by Al 2 O 3 decomposition does not lead to graphene-loss because graphene is observed across the whole surface of all samples over 1200 C. From the Raman data alone, as shown in Fig. 1b, we can assume that the decomposed Al 2 O 3 substrate affects the D and D 0 peak of graphene, but it does not lead to grapheneloss.…”
Challenging, but providing a key solution on material growth, Remote Epitaxy (RE)—the next concept of van der Waals Epitaxy (vdWE)—requires the stability of two-dimensional (2-D) material. However, when graphene, a...
“…6,17 Both the mobility and the carrier concentration are similar to those reported earlier. 8,10 GISFET characterization…”
Section: Graphene-based Fet Characterizationmentioning
confidence: 99%
“…This issue can be addressed by fabricating graphene-based ISFETs (GISFETs), which uses impervious graphene as the ion sensing layer, which is typically coated with an ion selective membrane (that prevents damage to the graphene layer itself). Due to its high carrier mobility and atomically thin nature, graphene has demonstrated excellent ionic sensitivity, [6][7][8][9] making it very well suited for ion efflux measurements.…”
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