Microelectronic Engineering
 2012
DOI: 10.1016/j.mee.2011.03.150
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Impact of ozone concentration on atomic layer deposited HfO2 on GaAs

Ki-Seok Chung
1
,
T. J. Park
2
,
P. Sivasubramani
3
et al.
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Cited by 2 publications
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Front End of the Line Process

Han
1
,
Cho
2
,
Delabie
3
et al. 2013
Atomic Layer Deposition for Semiconductors
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Front End of the Line Process

Han
1
,
Cho
2
,
Delabie
3
et al. 2013
Atomic Layer Deposition for Semiconductors
1
0
1
0
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Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Byun1,
Mahata2,
An3
et al. 2012
J. Phys. D: Appl. Phys.
15
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