Impact of Parasitic Resistances on the Output Power of a Parallel Vertical  Junction Silicon Solar Cell

Dieme, Nfally; Sane, Moustapha

doi:10.4236/epe.2016.83011

Cited by 4 publications

(1 citation statement)

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“…A better approach based on four parameters incorporates a series resistance and omits the shunt resistance [23][24][25]. e five-parameter model gives the best solutions since it accounts for the effect of power losses due to parasitic series and shunt resistances that are embedded in the solar module as a result of fabrication defects [26,27].…”

Section: Introductionmentioning

confidence: 99%

A Fast and Accurate Analytical Method for Parameter Determination of a Photovoltaic System Based on Manufacturer’s Data

Ndegwa

Simiyu

Ayieta

et al. 2020

Journal of Renewable Energy

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Modeling and simulation of a photovoltaic solar system play a significant role in understanding its behavior in various environmental conditions. Utilization of the datasheet information in modeling and simulation of the PV system correlates the experimental data and the theory that instigate the mathematical predictions of an actual system. A single-diode model gives a simple, fast, and straightforward way of depicting the PV system performance. We have developed a new approach of determining the five unknown parameters of a single-diode model using manufacturer’s data at three main points: the open circuit point (OCP), short circuit point (SCP), and the maximum power point (MPP) of the IV and PV curves. The ideality factor (A) and the diode saturation current (Io) are the key unknown parameters that greatly affect the reduplication of the three main points. The purpose of this study is to evaluate the ideality factor using simple calculation procedure starting from its optimal value (Ao) and other values within the proximity of Ao. The optimal value is obtained by assumptions of negligible series resistance (Rs) and very large shunt resistance (Rsh). Therefore, the choice of the other ideality factors in the neighborhood of its optimal value gives rise to different values of Rs, Rsh, and Iph that are more realistic in an experimental setup. Positive values of Rsh and Rs have been iteratively obtained by utilizing data at maximum power point combined with open and short circuit data. The five unknown parameters have been determined in the proximity of Ao and have been used to plot the PV curve with accuracy and precision of less than 0.5% error of maximum power and less than 0.1% error of Voc of manufacturer’s data. The proposed method has been implemented using fast, simple, and accurate procedures using GNU Octave programming software to calculate Ao, Io, Rs, Rsh, and Iph and to execute both Rs-Rsh and PV characteristic equations of BP3235T, KC200GT, BP-SX 150, and MSX60 PV modules. The reduced steps employed in the algorithm improve execution speed, thereby reducing the computation time.

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