Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors

Chuan, Mu Wen; Riyadi, Munawar Agus; Hamzah, Afiq; Alias, Nurul Ezaila; Sultan, Suhana Mohamed; Lim, Cheng Siong; Tan, Michael Loong Peng

doi:10.1016/j.rinp.2021.104714

Cited by 9 publications

(11 citation statements)

References 36 publications

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“…In the FET domain, the key performance indicators for recently described FETs using 2D materials are collated and benchmarked in Table 1 [ 8 , 9 , 10 , 11 , 12 , 13 , 14 ]. Graphene shows a very high field-effect mobility (μFE) of 30,000 cm 2 /Vs, as seen in real device simulations, which far exceeds other materials.…”

Section: Graphene Field-effect Transistorsmentioning

confidence: 99%

Comprehensive Study and Design of Graphene Transistor

Cai,

Ye,

Jahannia

et al. 2024

Micromachines

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Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices.

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Section: Graphene Field-effect Transistorsmentioning

confidence: 99%

Comprehensive Study and Design of Graphene Transistor

Cai,

Ye,

Jahannia

et al. 2024

Micromachines

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“…Moreover, the band structure and current-voltage characteristics of the SiNR (N A -ASiNRs) FETs can be suitably controlled by varying the nanoribbon width N A [84]. By considering phonon scattering effects, Chuan et al [85] have extended the dimensional scaling properties of silicene FETs up to the non-ballistic limit (figure 4(a)). The width scaling of the band gap and I on /I off reveals that the 7-ASiNR system is well-optimized for nanoelectronic digital switching applications [86] in the ballistic limit.…”

Section: Transport Properties Of Silicenementioning

confidence: 99%

“…Device performance metrics: on-off current ratio (Ion/I off ), subthreshold swing (SS), and drain-induced barrier lowering (DIBL) of silicene-based (7-SiNR) FETs in presence and absence of phonon scattering process. Reproduced from [85]. CC BY 4.0.…”

Section: Transport Properties Of Silicenementioning

confidence: 99%

A review on transport characteristics and bio-sensing applications of silicene

Ghosal,

Bandyopadhyay,

Chowdhury

et al. 2023

Rep. Prog. Phys.

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Silicene, a silicon counterpart of graphene, hass been predicted to possess massless Dirac fermions.Compared to graphene, the effective spin–orbit interaction is quite significant compared to grapheneand as a result, buckling in silicene opens a gap of 1.55 meV at the Dirac point. This band gap can befurther tailored by applying in plane stress, an external electric field, chemical functionalization anddefects. This special feature allows silicene and its various derivatives as potential candidates fordevice applications. In this short review, we would like to explore the transport features of the pristinesilicene and its possible nano derivatives. Besides, the recent progress in biosensor applications ofsilicene and its hetero-structures will be highlighted.We hope the results obtained from recentexperimental and theoretical studies in silicene will setup a benchmark in diverse applications such asin spintronics, bio-sensing and opto-electronic devices.

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“…Among the aforementioned techniques, doping is the most commonly employed technique in the semiconductor industry to alter the electronic properties [ 25 ]. Furthermore, the performance of SiNR FETs are sensitive to their device dimensions [ 20 , 26 ]; and it is still a major challenge to precisely control the widths of nanoribbons even for the established graphene monolayers [ 27 ]. Therefore, a uniformly aluminium (Al) doped silicene monolayer was proposed to engineer the bandgap of silicene, producing the AlSi 3 monolayer.…”

Section: Introductionmentioning

confidence: 99%

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

et al. 2022

Self Cite

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Moore’s Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

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Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors

Cited by 9 publications

References 36 publications

Comprehensive Study and Design of Graphene Transistor

Comprehensive Study and Design of Graphene Transistor

A review on transport characteristics and bio-sensing applications of silicene

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model

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