Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors

Abstract

InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs must be further explored. In this study, the ITZO thickness (TITZO) is designed to tailor the initial performance of devices, especially for the 100 nm TITZO TFT, producing excellent electrical properties of 44.26 cm2V−1s−1 mobility, 92 mV/dec. subthreshold swing (SS), 0.04 V hysteresis, and 3.93 × 1010 ON/OFF ratio, which are superior to those of the reported ITZO TFTs. In addition, incident light coupled with tunable photon energy is introduced to monitor the leakage current of various TITZO devices. The OFF-current results demonstrate that under the identical photon energy, many more electrons are photo-excited for the thicker TITZO TFTs. NBIS-induced Vth shift and SS deterioration in all TFTs are traced and analyzed in real time. As the TITZO thickens to near Debye length, the degree of degradation is exacerbated. When the thickness further increases, the notorious instability caused by NBIS is effectively suppressed. This study provides an important research basis for the application of ITZO-based TFTs in future displays.

Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

“…The oxygen-related species present in oxide thin-film transistors (TFTs), such as oxygen vacancies (V O ) or hydroxyl (OH) groups, have a significant impact on the stability and electrical characteristics of the TFTs [9,10]. Thus far, extensive studies have been conducted to investigate the effects of various process conditions on the concentration of oxygen-related species in the oxide channel layer [11][12][13][14][15][16][17]. The post-deposition annealing atmosphere has a particularly strong influence on the number of oxygen species within the channel layer and also affects the electrical properties and stability of oxide TFTs with various channel materials [18][19][20][21][22][23][24].…”

51‐3: 65‐in. Splicing Screen Adapted to a Wide Temperature Range and High Brightness

“…[3] This increase depends on the photon energy of incident light. [4] In this technology, TFT devices are covered by color resistance. Therefore, the TFT device is less affected by light and has a longer lifespan.…”

Analog/RF Performance Analysis of a-ITZO Thin Film Transistor

“…However, this high mobility and stability is still not sufficient for next generation displays which require fe of the order of 20. Wang et al [20] proposed a-ITZO as an alternative of IGZO with high fe (~ 44) and good stability. Zhong et al [21] reported that ITZO is a potential TFT channel material as it offers high mobility of 19 cm 2 V −1 s −1 , and subthreshold swing of 0.6 V. Based upon the past literature, it can be concluded that a-ITZO has all potential properties that makes it a potential material for TFTs.…”