2002
DOI: 10.1117/12.474623
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Impact of photo-induced species in O 2 -containing gases on lithographic patterning at 193-nm wavelength

Abstract: In order to prevent contaminants and impurities from being deposited on the optical elements of the tool, ArF lithographic patterning of photoresists is currently done in the exposure chamber of a scanner or stepper that is purged with clean dry air. Unfortunately, the 6.4 eV (193 nm) ArF laser photons can dissociate molecular oxygen in air into atomic oxygen, 1,2,3 form ozone, 1 form singlet molecular oxygen and atomic oxygen from the photodissociation of ozone, 1-4 and mediate singlet molecular oxygen format… Show more

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