2020
DOI: 10.1016/j.nima.2020.164568
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Impact of polishing on crystallinity and static performance of Cd1−xZnxTe

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Cited by 7 publications
(1 citation statement)
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“…To reduce the dark current, high-bandgap materials, dopants for growing intrinsic semiconductors, and passivants for Schottky surface heterojunctions have been developed previously [13,30,31]. However, it is also possible to reduce the leakage current and increase the material resistance by eliminating surface defects and rough regions through post-processing of the as-grown semiconductor crystals [32][33][34].…”
Section: Introductionmentioning
confidence: 99%
“…To reduce the dark current, high-bandgap materials, dopants for growing intrinsic semiconductors, and passivants for Schottky surface heterojunctions have been developed previously [13,30,31]. However, it is also possible to reduce the leakage current and increase the material resistance by eliminating surface defects and rough regions through post-processing of the as-grown semiconductor crystals [32][33][34].…”
Section: Introductionmentioning
confidence: 99%