Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs

Lin, Chien Yu; Chang, Ting Chang; Liu, Kuan Ju; Tsai, Jyun Yu; Chen, Ching En; Liu, Hsi Wen; Lu, Ying‐Hsin; Tseng, Tseung‐Yuen; Cheng, Osbert; Huang, Cheng Tung

doi:10.1016/j.tsf.2016.08.072

Thin Solid Films

2016

DOI: 10.1016/j.tsf.2016.08.072

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Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs

Chien Yu Lin

Ting Chang Chang

Kuan Ju Liu

et al.

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Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs

Cited by 3 publications

References 25 publications

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology

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