Impact of process variability of active ring resonators in a 300mm silicon photonic platform

Maître, Patrick Le; Carpentier, Jean‐François; Baudot, Charles; Vulliet, N.; Souhaite, A.; Quelene, Jean-Baptiste; Ferrotti, Thomas; Bouf, F.

doi:10.1109/ecoc.2015.7341725

Cited by 11 publications

(3 citation statements)

References 7 publications

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“…RMs exhibit the advantages of compact footprint, low modulation power and can reach very high data rates [39]. Unfortunately, they also suffer from a significant thermal sensitivity and high dependence on fabrication tolerance [40]. On the other hand, MZMs can offer high modulation speed, and are more tolerant to thermal and fabrication variations.…”

Section: Design Principlesmentioning

confidence: 99%

Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

Ferrotti¹,

Blampey²,

Jany³

et al. 2016

Opt. Express

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In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

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Section: Design Principlesmentioning

confidence: 99%

Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

Ferrotti¹,

Blampey²,

Jany³

et al. 2016

Opt. Express

Self Cite

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“…However, the design differences required for PDs and MODs can significantly increase the complexity and the cost of fabrication as well as the electrical circuit design for wavelength control/trimming [9][10][11][12][13][14][15] and stabilization in the 300 mm silicon photonics platform [16][17][18]. Therefore, a universal structure with both high-speed modulation and detection operation will greatly enhance the silicon photonics integration level at low cost and can enrich programmable photonics circuits with more flexibility for light detection and modulation.…”

Section: Introductionmentioning

confidence: 99%

Universal Silicon Ring Resonator for Error-Free Transmission Links

Zhang,

Zhu,

et al. 2023

Preprint

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We report the design, fabrication, and characterization of a universal silicon p-n junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, and in conjunction with a modulation efficiency of ~4 Vmm and >8 dB optical modulation extinction ratio (ER), enabling C band 50-Gb/s NRZ communication link with bit error rate (BER) ≤ 3×10-12. Individually, the speed of modulation and detection is measured up to 112 Gb/s and 80 Gb/s, respectively. The principle of co-designing PN junction ring modulator and detector performance required for error-free communication links can significantly ease the fabrication yield challenges of ring structures by reducing the number of types of devices. The principle can also be applied to O band wavelengths. To the best of our knowledge, for the first time, a device of this type has achieved both error-free modulation and detection operation up to 50 Gb/s in the C band individually or in conjugation as an error free communication link, which paves the way to realize a >1.6 Tb/s all-silicon WDM based error free optical transceiver link in future and is essential for future programmable photonics circuits.

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“…As an example Fig. 8 is showing the co-integration of supplementary Si-etch steps allowing the fabrication of Ring Resonators [4]. Such devices are promising candidates for the dense WDM integration in chip to chip communication.…”

Section: Introductionmentioning

confidence: 99%

Industrialization of Si-Photonics into a 300mm CMOS fab

Bœuf

Ouellette²

2016

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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Impact of process variability of active ring resonators in a 300mm silicon photonic platform

Abstract: We study the process variability impact of silicon ring modulators on resonance wavelength, which is a key parameter to design WDM communication systems based on those devices.

Cited by 11 publications

References 7 publications

Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

Universal Silicon Ring Resonator for Error-Free Transmission Links

Industrialization of Si-Photonics into a 300mm CMOS fab

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