Impact of Process Variations on Upset Reversal in a 65 nm Flip-Flop

Kauppila, A. V.; Ball, D. R.; Bhuva, B. L.; Massengill, L.W.; Holman, W.T.

doi:10.1109/tns.2012.2196448

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Cited by 6 publications

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“…The parameter variations can significantly affect the single-event upset (SEU) and SEU recovery in static random access memories (SRAMs) and flip-flop circuits. In combinational logic, parameter variations can induce SET and SET quenching shifts [3][4][5].…”

mentioning

confidence: 99%

“…Figure 1(e) shows the SEU cross-section, and the shift ranges between the case with PV and the case without PV. According to a method discussed in previous researches [2,4,5], we propose a parameter named "SEU cross-section range percentage" to study the SEU cross-section shift accounts for PV. This parameter is used to quantify how PV affects SEU, which will improve the accuracy of SEU crosssection prediction when considering PV.…”

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confidence: 99%

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