Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs

Rossetto, Isabella; Rampazzo, F.; Gerardin, Simone; Meneghini, Matteo; Bagatin, M.; Zanandrea, A.; Dua, C.; Forte-Poisson, M.A. di; Aubry, R.; Oualli, M.; Delage, S.; Paccagnella, A.; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.1016/j.sse.2015.05.013

Cited by 8 publications

(3 citation statements)

References 23 publications

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“…45 Similar effects have been reported for InAlN/GaN HEMTs. 51 Displacement-damage induced degradation was studied for proton fluences from 10 14 p/cm 2 to 4 × 10 14 p/cm 2 , at 3 MeV. As is usual, a positive V TH shift and an increase of the on-state resistance (R ON ) that followed a linear trend with the proton radiation fluence was observed.…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 86%

“…Proton damage.-A wide range of studies have been performed on proton damaged HEMTs in different proton energy regimes. 5,12,16,[21][22][23][24][25][27][28][29][30][31][32][33][34][35][36][37][42][43][44][45][46][47][49][50][51][52][53][54][55][56][57][58]79 For the high energy protons encountered in space-based applications, AlGaN/GaN HEMTs show decreases in tranconductance (g m ), drain-source current (I DS ), shifts in threshold voltage (V T ) and gate current (I G ) after irradiation with 40 MeV protons at doses equivalent to decades in low-earth orbit. These protons create deep electron traps that increase the HEMT channel resistance and decrease carrier mobility.…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

See 1 more Smart Citation

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 86%

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

View full text Add to dashboard Cite

show abstract

“…Admittedly, some exploratory studies have yet been reported to be aimed at proton irradiation effect on HEMT devices, [15][16][17] most of which have focused on the performance degradation of devices caused by different proton fluences and proton energies. Much less has been done to study the effects on the defects properties induced by proton irradiation, such as the type of defects and the defect energy level.…”

Section: Introductionmentioning

confidence: 99%

Effect of defects properties on InP-based high electron mobility transistors*

Sun

Chang

et al. 2019

Chinese Phys. B

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The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band E T, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level E T shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with E T above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.

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