Impact of Research on Defects in Silicon on the Microelectronic Industry

Bergholz, W.; Gilles, D.

doi:10.1002/1521-3951(200011)222:1<5::aid-pssb5>3.0.co;2-l

Cited by 27 publications

(9 citation statements)

References 35 publications

(34 reference statements)

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“…14 Piezo correction factor P(N,T) in n-Si as a function of doping level, for various temperatures. Redrawn and modified from Kanda[30].…”

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confidence: 78%

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Properties of Silicon

Tilli

Haapalinna

2015

Handbook of Silicon Based MEMS Materials and Technologies

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“…14 Piezo correction factor P(N,T) in n-Si as a function of doping level, for various temperatures. Redrawn and modified from Kanda[30].…”

supporting

confidence: 78%

“…Reviews by Borghesi et al [13] on oxygen precipitation in silicon; Bergholz and Gilles [14] on defects in general in silicon; and Sinno et al [15] on defect engineering in CZ silicon give a good overview of how defects affect IC manufacturing.…”

Section: Defects In Silicon Latticementioning

confidence: 99%

Properties of Silicon

Tilli

Haapalinna

2015

Handbook of Silicon Based MEMS Materials and Technologies

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“…It is well known that supersaturated intrinsic point defects, interstitial silicon or vacancy, are generated during crystal growth, and the different defect zones related different point defects would form at the same wafers. [17][18][19] Thus, it is important to understand the behavior of copper precipitation in the different regions of silicon wafers with larger diameter, and to understand how intrinsic point defects affect on copper precipitation.…”

Section: Effect Of Intrinsic Point Defects On Copper Precipitation Inmentioning

confidence: 99%

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

Yang

et al. 2003

Applied Physics Letters

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“…Rapid thermal processing (RTP) has been intensively employed in modern microelectronic device fabrication such as post-implant anneals [1,2], thermal oxidation [3,4], and shallow junction formation [5]. Over the years, the presentation of the magic denuded zone (MDZ) concept that is believed to be a milestone in the defect engineering of silicon wafers has exploited the application of RTP in the manufacture of silicon wafers [6,7]. The underlying idea of the MDZ concept is to apply RTP for the introduction of a vacancy concentration profile increasing from the surface to the bulk of the wafer crossing the critical concentration at some desired depth, and the installed vacancies have full control over the oxygen precipitate profile of the wafer to form an ideal intrinsic gettering structure consisting of a bulk microdefect (BMD) region and a precipitate-free zone (PFZ) [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal processing on high temperature oxygen precipitation behaviour in Czochralski silicon wafer

Liang

Tian

et al. 2004

J. Phys.: Condens. Matter

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The effect of rapid thermal processing (RTP) on the oxygen precipitation occurring at 1050 °C in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050 °C in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050 °C anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatment will dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050 °C anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050 °C anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.

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Impact of Research on Defects in Silicon on the Microelectronic Industry

Cited by 27 publications

References 35 publications

Properties of Silicon

Properties of Silicon

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

Effect of rapid thermal processing on high temperature oxygen precipitation behaviour in Czochralski silicon wafer

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