Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams

Uedono, Akira; Mori, Kazuteru; Ito, Kyoji; Imamizu, Kentarou; Hachiya, T.; Kamijo, Hiroyuki; Hasunuma, M.; Kaneko, H.; Toyoda, Hiroshi; Ohdaira, Toshiyuki; Suzuki, Ryoichi

doi:10.1143/jjap.46.l483

Cited by 10 publications

(7 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This value is slightly smaller than the k value at the same temperature in this work (1.2×10 −16 m 2 /s). The more rapid Ni 3 Sn 4 growth for the electroplated Ni/Sn couples in this work may be due to the more defects (e.g., vacancies and grain boundaries) in the electroplated components [12,[22][23], which should enhance the diffusion of Sn and Ni.…”

Section: Reaction Kineticsmentioning

confidence: 87%

Solid state interfacial reactions in electrodeposited Ni/Sn couples

Tang

Liu

et al. 2010

Int J Miner Metall Mater

View full text Add to dashboard Cite

Ni/Sn couples, prepared by sequentially electroplating Ni layers and Sn layers on metallized Si wafers, were employed to study the microstructures and growth kinetics of Ni-Sn intermediate phases, when the Ni/Sn couples were aged at room temperature or annealed at temperatures from 150 to 225°C for various times. The results show that the NiSn phase and Ni 3 Sn 4 phase are formed, respectively, in the aged couples and annealed couples. The Ni 3 Sn 4 layer is continuously distributed between the Ni and Sn sides in the annealed Ni/Sn couples. The Ni 3 Sn 4 growth follows parabolic growth kinetics with an apparent activation energy of 39.0 kJ/mol.

show abstract

Section: Reaction Kineticsmentioning

confidence: 87%

Solid state interfacial reactions in electrodeposited Ni/Sn couples

Tang

Liu

et al. 2010

Int J Miner Metall Mater

View full text Add to dashboard Cite

show abstract

“…The other method of void formation is the Kirkendall voids, which is observed at the Cu 3 Sn layer. This voiding could be related to the Kirkendall effect, which was attributed to the unequal diffusion rates of Cu and Sn in the IMC [29] and impurity segregation [30][31][32][33][34]. It is generally believed that Cu is the dominant diffusing species in Cu 3 Sn, a larger diffusion flux of Cu would occur from the Cu substrate [35][36][37].…”

Section: Correlation Of Void Formation With Reactive Metal Layersmentioning

confidence: 99%

“…It is generally believed that Cu is the dominant diffusing species in Cu 3 Sn, a larger diffusion flux of Cu would occur from the Cu substrate [35][36][37]. If the vacancies, left by the diffusing-out of Cu atoms, cannot be occupied, they would gather to form new micro-voids with impurity [30][31][32][33][34]. Consequently, if the unequal diffusion rate between Cu and Sn exists, the voids would increase continuously.…”

Section: Correlation Of Void Formation With Reactive Metal Layersmentioning

confidence: 99%

Highly Robust Ti Adhesion Layer during Terminal Reaction in Micro-Bumps

et al. 2022

View full text Add to dashboard Cite

The use of scaled-down micro-bumps in miniaturized consumer electronic products has led to the easy realization of full intermetallic solder bumps owing to the completion of the wetting layer. However, the direct contact of the intermetallic compounds (IMCs) with the adhesion layer may pose serious reliability concerns. In this study, the terminal reaction of the Ti adhesion layer with Cu–Sn IMCs was investigated by aging the micro-bumps at 200 °C. Although all of the micro-bumps transformed into intermetallic structures after aging, they exhibited a strong attachment to the Ti adhesion layer, which differs significantly from the Cr system where spalling of IMCs occurred during the solid-state reaction. Moreover, the difference in the diffusion rates between Cu and Sn might have induced void formation during aging. These voids progressed to the center of the bump through the depleting Cu layer. However, they neither affected the attachment between the IMCs and the adhesion layer nor reduced the strength of the bumps. In conclusion, the IMCs demonstrated better adhesive behavior with the Ti adhesion layer when compared to Cr, which has been used in previous studies.

show abstract

“…The value of S for the annihilation of positrons trapped by vacancies is larger than that for positrons annihilated from the interstitial sites. Recent positron annihilation spectroscopy studies have suggested that ECD-Cu films have a larger amount of vacancy clusters than PVD-Cu films [2][3][4]. In this paper, we investigate lattice defects in a PVD-CuSb dilute alloy film compared to a PVD-pure-Cu film by measuring the Doppler broadening of the annihilation radiation using a slow positron beam.…”

Section: Introductionmentioning

confidence: 99%