Impact of Schottky junctions in the transformation of switching modes in amorphous Y₂O₃-based memristive system

Abstract

In this report, we study factors that dominate the mode transformation of resistive switching (RS) in yttria based memristive devices. It is found that amorphous yttria films are more suitable for RS whereas highly crystalline films are counterproductive for RS. The transformation from unipolar to bipolar resistive switching mode is demonstrated in our devices via moving from a system of single Schottky barrier diode (SBD) to double SBD. The conduction mechanism behind these transformation mechanisms is found to be predominantly interfacial. We also report a forming-free Al/Y2O3/Al based memristor fabricated by the dual ion beam sputtering without any post-processing steps for the first time. It shows stable switching behavior for >29 000 cycles with good retention (105 s) characteristics.

Electroforming-Free Y2O3Memristive Crossbar Array with Low Variability

“…When a positive voltage polarity (0 to +3 V) is applied on the TE, the device resistance state is switched from the high resistance state (HRS) to the low resistance state (LRS). This process is termed the “SET” process, as shown in Figure b, and the SET voltage ( V SET ) of the device is +1.8 V. The switching mechanism of the Y 2 O 3 -based memristor is described in our previous report …”

“…On the other hand, when the negative voltage bias (from 0 to −3 V) is applied on the TE, the device resistance state is switched from LRS to HRS . This process is known as “RESET” process as depicted in Figure c, and the RESET voltage ( V RESET ) of the device is −1.93 V. Furthermore, when the applied negative bias on TE is replaced by the positive bias, the device switches back from HRS to LRS as shown in Figure b.…”

“…The device production yield can be further improved by involving the nanofabrication processes, as reported by Chen et al and Zhang et al, while realizing the crossbar array with reduced individual device area and larger device density and precise control over contaminants during the fabrication process as carried out in a standard cleanroom environment. Figure c represents the increase in current with the corresponding rise in the active area of the device . At the third stage of the shadow masking technique, as depicted in Figure g, the device area is scaled down from 0.6 to 0.3 mm 2 , and subsequently the device current is measured.…”

Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

“…The active organic material switches from the low conduction state to high conduction state at a particular threshold switching voltage under the applied electric field . The variation in electrical conduction state of organic materials can be considered as electrically ON and OFF phenomena commonly used for conventional binary data storage devices . In recent years, numerous memory devices based on organic materials including biomaterials such as enzymes, natural polymers like silk fibroin synthetic materials like organic conjugated polymers, metal‐organic ligand coordination complexes, and small organic molecules have been reported.…”

Bipolar resistive switching characteristics of amorphous SrTiO3thin films prepared by the sol-gel process

“…This development has attracted widespread attention in the industry and academia, and many new investigations of resistive memory have been initiated by researchers [13,14]. The RS effect of the insulator layer has been discovered in various kinds of amorphous metal oxides, such as ZnO, HfO 2 , TiO 2 , MgO, Al 2 O 3 , and Y 2 O 3 [15][16][17][18][19]; and in amorphous perovskite and layered perovskite oxides such as YCrO 3 , Pr 0.67 Sr 0.33 MnO 3 , Bi 3.15 Bd 0.85 Ti 3 O 12 , SrTiO 3 and Nb-doped SrTiO 3 [20][21][22][23][24][25][26], etc. Among these, the amorphous strontium titanate-based memory structure uses the following electrodes: Pt, Ti, and indium tin oxide (ITO) [23][24][25][26].…”