Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Kano, Emi; Uzuhashi, Jun; Kobayashi, Koki; Ishikawa, Kosuke; Sawabe, Kyosuke; Narita, Tetsuo; Sierakowski, Kacper; Bockowski, Michal; Ohkubo, Tadakatsu; Kachi, Tetsu; Ikarashi, Nobuyuki

doi:10.1002/pssr.202400074

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…The implanted ions can create defects and disorder in the surface layer, facilitating the diffusion of hydrogen atoms and enhancing the kinetics of the hydrogen absorption/desorption reactions. Moreover, ion implantation can improve the surface hardness and wear resistance of the alloy, extending its cyclic stability [ 114 ].…”

Section: Modification Strategies For Enhancing Hydrogen Storage Perfo...mentioning

confidence: 99%

Magnesium-Based Hydrogen Storage Alloys: Advances, Strategies, and Future Outlook for Clean Energy Applications

Xu,

Zhou,

et al. 2024

Molecules

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Magnesium-based hydrogen storage alloys have attracted significant attention as promising materials for solid-state hydrogen storage due to their high hydrogen storage capacity, abundant reserves, low cost, and reversibility. However, the widespread application of these alloys is hindered by several challenges, including slow hydrogen absorption/desorption kinetics, high thermodynamic stability of magnesium hydride, and limited cycle life. This comprehensive review provides an in-depth overview of the recent advances in magnesium-based hydrogen storage alloys, covering their fundamental properties, synthesis methods, modification strategies, hydrogen storage performance, and potential applications. The review discusses the thermodynamic and kinetic properties of magnesium-based alloys, as well as the effects of alloying, nanostructuring, and surface modification on their hydrogen storage performance. The hydrogen absorption/desorption properties of different magnesium-based alloy systems are compared, and the influence of various modification strategies on these properties is examined. The review also explores the potential applications of magnesium-based hydrogen storage alloys, including mobile and stationary hydrogen storage, rechargeable batteries, and thermal energy storage. Finally, the current challenges and future research directions in this field are discussed, highlighting the need for fundamental understanding of hydrogen storage mechanisms, development of novel alloy compositions, optimization of modification strategies, integration of magnesium-based alloys into hydrogen storage systems, and collaboration between academia and industry.

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Section: Modification Strategies For Enhancing Hydrogen Storage Perfo...mentioning

confidence: 99%

Magnesium-Based Hydrogen Storage Alloys: Advances, Strategies, and Future Outlook for Clean Energy Applications

Xu,

Zhou,

et al. 2024

Molecules

View full text Add to dashboard Cite

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Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Uzuhashi,

Chen,

Tanaka

et al. 2024

Journal of Applied Physics

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An area-selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultrahigh-pressure annealing (UHPA) has substantially improved the p-type activation efficiency; however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative cathodoluminescence, transfer length method, scanning transmission electron microscopy, and atom probe tomography (APT) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm−3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency.

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Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN

Kataoka,

Narita,

Tomita

et al. 2024

Applied Physics Letters

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Toward p-type GaN formation by Mg ion implantation (I/I) applicable to devices, depth-resolved photoluminescence (PL) revealed key behaviors during activation annealing for precise profile control, such as Mg substitution into Ga-sites (MgGa) and recovery of I/I defects. Depth profiles of the MgGa acceptor concentration were measured for Mg-I/I and Mg/N-I/I samples after ultra-high-pressure annealing at 1300 °C for 1–60 min. The cycle of low-damage dry etching and PL measurement was repeated over the I/I depth, and the MgGa concentration was estimated at each depth based on the calibration curve for the PL intensity ratio between acceptor-bound excitons (A0XA) and free excitons (FXA). In the region deeper than the I/I peak of 0.3 μm, almost all of the Mg atoms rapidly substituted into Ga-sites during the short annealing process. By contrast, the Mg substitution ratios in the shallower region were low when the annealing process was short but were improved by the sequential N-I/I. The low substitution ratio can be explained by MgGa bonding with nitrogen vacancy (VN)-related defects, while the implanted N-ions can compensate them. The PL intensity near the mean implantation depth of Mg/N-I/I was gradually improved as the annealing duration was increased to 60 min, indicating a slow reduction of nonradiative recombination centers. Simultaneously, the green luminescence associated with the VN-related defects decreased in intensity with increasing annealing time. Therefore, the main effect of prolonging annealing is the enhancement of slow defect recovery rather than enhancement of the Mg substitution as a fast process.

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Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Cited by 3 publications

References 28 publications

Magnesium-Based Hydrogen Storage Alloys: Advances, Strategies, and Future Outlook for Clean Energy Applications

Magnesium-Based Hydrogen Storage Alloys: Advances, Strategies, and Future Outlook for Clean Energy Applications

Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN

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