Impact of Shear Strain and Quantum Confinement on &lt;110&gt; Channel nMOSFET with High-Stress CESL

Takashino, H.; Okagaki, Takeshi; Uchida, Tetsuya; Hayashi, Takashi; Tanizawa, Motoaki; Tsukuda, Eiji; Eikyu, K.; Wakahara, S.; Ishikawa, Kiyoshi; Tsuchiya, O.; Inoue, Yasuo

doi:10.1007/978-3-211-72861-1_25

Cited by 7 publications

(1 citation statement)

References 4 publications

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“…6(c) and 6(f), it can be observed that a compressive CESL induces tensile vertical stress ( z ) and that the removal of gate-top SiN decreases the magnitude of z from 0.54 to 0.25 GPa. In the device simulation, inversion layer mobility was calculated using a strain-dependent two-dimensional band structure, 14,15) which is available on Sentaurus Device. Figure 7 shows calculated mobility enhancement factors against channel stress for electrons and holes.…”

Section: Simulation Analysismentioning

confidence: 99%

Stress from Discontinuous SiN Liner for Fully Silicided Gate Process

Yamashita

Nishida

Okagaki

et al. 2008

jjap

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New materials often force modification in a metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication process and a device structure. In our investigation, a high-stress silicon nitride (SiN) contact etch stopper layer (CESL), which improves device performance by straining the Si lattice, was used as the modified structure. A portion of its gate surround was cut to fabricate a fully silicided (FUSI) metal gate. FET characteristics of a polycrystalline silicon (poly-Si) gate and a Ni-FUSI gate MOSFET with a discontinuous CESL were compared with those of a poly-Si gate MOSFET with an ordinary continuous CESL for several SiN-stress conditions. It was found that the removal of a gate-top CESL diminishes mobility modulation effects of a high-stress CESL. It was also demonstrated that stress due to a FUSI gate compensates the effect of gate-top CESL removal. Mobility enhancement utilizing a high-stress SiN film was still effective for a FUSI gate process.

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Section: Simulation Analysismentioning

confidence: 99%