Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors

Kimbugwe, Nakibinge Tawfiq; Yılmaz, Ercan

doi:10.1007/s10854-020-03783-z

Cited by 3 publications

(4 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, parameters that need to be determined include interfacial trap density (Nit), border trap density (Nbt), effective oxide trap density (Nox), series resistance (Rs), etc. In order to analyze the electrical characteristics, we chose the sample annealed at 450 0 C since earlier on, Kimbugwe and Yilmaz [8] observed that its dielectric constant was the highest in comparison to the other samples and it had a flat-band voltage (-0.8V) that was the closest to the ideal one (~0.27 V) [8]. Here, we took these measurements for both low and high frequencies.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Kimbugwe¹,

Karaçalı²,

Yılmaz³

2020

RAP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

In this study, the structural and electrical characteristics of the Al/Al2O3/SiO2/n-Si Metal-Oxide-Semiconductor (MOS) structure were investigated. Al2O3 films were deposited on the n-type Si wafer by RF magnetron sputtering after the growth of SiO2 by dry oxidation. The fabricated Al2O3/SiO2/n-Si structures were annealed at 250 o C, 450 o C, and 750 o C in a N2 ambient. XRD and AFM measurements were conducted in order to examine the crystallinity and the surface topography of the Al2O3/SiO2/n-Si structure. Aluminum (Al) front and back contacts were then deposited by RF magnetron sputtering. C-V and G/w-V measurements were performed at low and high frequencies with the aim of analyzing the electrical characteristics. The discrepancy in the C-V curves for different frequencies stemmed from the defects and dangling bonds at the interfaces and in the oxide layers.

show abstract

Section: Resultsmentioning

confidence: 99%

“…4. In our previous study [8], Nit, Nox and Rs dependence on frequency was analyzed. Here, we focused on analyzing the barrier height dependence on the frequency.…”

Section: Resultsmentioning

confidence: 99%

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Kimbugwe¹,

Karaçalı²,

Yılmaz³

2020

RAP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

show abstract

“…7. This behavior may be dependent on the interface traps, relaxation time, the frequency of the ac signal [4,6,7]. The density of interface states (Dit) at the Er2O3/SiO2/n-Si interface is one of the most important parameters to investigate and it affects C-V and G/ω-V measurements.…”

Section: C-v and G/ω-v Characteristicsmentioning

confidence: 99%

“…Besides, an interfacial layer (SiO2) is grown on Si before the high-k layer to reduce lattice mismatch. Moreover, the interfacial layer could not only reduce the lattice mismatch but it would also increase the thermodynamic stability between high-k material and Si [4,7]. To date, several techniques have been developed to grow Er2O3 thin films on a silicon substrate (Si) such as atomic layer deposition (ALD), chemical vapour deposition (CVD), E-beam evaporation and laser ablation.…”

Section: Introductionmentioning

confidence: 99%

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Mutale¹,

Yılmaz²

2020

RAP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

The aim of this paper is to investigate the frequency-dependent electrical characteristics of the Al/Er2O3/SiO2 /n-Si/ Al MOS capacitor deposited by the e-beam PVD technique. The Er2O3/SiO2 films were annealed in the nitrogen ambient for 30 min at 550 o C. The crystal structure and surface morphology of thin films have been investigated by XRD and AFM. The capacitance-voltage(C-V) and conductance-voltage (G/w-V) measurements have been performed in the frequency range of 50kHz-1MHz at room temperature. Furthermore, the frequency effects on the series resistance and interface state density through C-V and G/w-V curves were studied and analyzed. It has been observed that the series resistance gives a peak for each frequency, decreasing and disappearing with increasing frequencies. Also, it has been shown that the density of interface states increases with increasing frequency. The measured and calculated results reveal that the frequency has a significant impact on both Rs and Dit of the fabricated MOS characteristics. These effects are supposed to occur because of the interfacial layer (SiO2) that is contained in between n-Si and Er2O3.

show abstract

Fundamental Origin of Si Surface Defects Caused by Laser Irradiation and Prevention of Suboxide Formation through High Density Ultrathin SiO2

Jin Kim,

Park,

Ryu

et al. 2024

Applied Surface Science

View full text Add to dashboard Cite

Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors

Cited by 3 publications

References 35 publications

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Fundamental Origin of Si Surface Defects Caused by Laser Irradiation and Prevention of Suboxide Formation through High Density Ultrathin SiO2

Contact Info

Product

Resources

About

Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors

Cited by 3 publications

References 35 publications

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al2O3/SiO2/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al2O3/SiO2/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er2O3/SiO2/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Fundamental Origin of Si Surface Defects Caused by Laser Irradiation and Prevention of Suboxide Formation through High Density Ultrathin SiO2

Contact Info

Product

Resources

About

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al₂O₃/SiO₂/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM