No abstract

In this study, the structural and electrical characteristics of the Al/Al2O3/SiO2/n-Si Metal-Oxide-Semiconductor (MOS) structure were investigated. Al2O3 films were deposited on the n-type Si wafer by RF magnetron sputtering after the growth of SiO2 by dry oxidation. The fabricated Al2O3/SiO2/n-Si structures were annealed at 250 o C, 450 o C, and 750 o C in a N2 ambient. XRD and AFM measurements were conducted in order to examine the crystallinity and the surface topography of the Al2O3/SiO2/n-Si structure. Aluminum (Al) front and back contacts were then deposited by RF magnetron sputtering. C-V and G/w-V measurements were performed at low and high frequencies with the aim of analyzing the electrical characteristics. The discrepancy in the C-V curves for different frequencies stemmed from the defects and dangling bonds at the interfaces and in the oxide layers.