Impact of Solder Degradation on <i>V</i>
                  <sub>CE</sub> of IGBT Module: Experiments and Modeling

Jia, Yi; Huang, Yongle; Xiao, Fei; Deng, Hong‐Wei; Duan, Yaoqiang; Iannuzzo, Francesco

doi:10.1109/jestpe.2019.2928478

Cited by 33 publications

(13 citation statements)

References 25 publications

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“…The time until failure is often several weeks long, and the module is tested at several stressor levels to map its influence on the lifetime [39]. With the improvement in simulation software packages and the increase in computing power, it increases the viability of using the software tools to assess individual failure modes and reliability issues of power module packages [19]- [21].…”

Section: Discussion and Future Workmentioning

confidence: 99%

“…Alternatively, the problems related to thermomechanical induced stress are evaluated digitally using FEM software. Predicting the location and amount of thermomechanical stress in the module is important to aid in the improvement of the reliability of future power modules designs [19]- [21]. Setting up a FEM model of a power module often requires complex 3D modelling, knowledge of mixed boundary conditions and a library of material properties, which all can be linked to some degree of uncertainty.…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of in situ Thermomechanical Stress–Strain in Power Modules Using Laser Displacement Sensors

Jørgensen

Munk‐Nielsen

Uhrenfeldt

2021

IEEE Trans. Power Electron.

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Digital design has been successfully employed in development of new compact wide bandgap power modules, achieving unprecedented switching speeds while maintaining low thermal resistance. Owing to the achieved performance, the next step in the field is ensuring that proposed designs are mechanically robust and reliable. The new power module structures lack the long history of experimental experience as is the case with conventional silicon power modules. To limit the number of physical prototypes that needs to be built and to speed up development time, having a verified simulation model of the thermomechanical behavior is of great value to designers. In this paper a finite element simulation of the thermomechanical induced stress and strain is presented of an integrated GaN fullbridge switching cell. The simulated strain of the power module is verified by an experimental test. During the test, one of the semiconductor devices of the module is subjected to a power loss. A laser displacement sensor is used to measure the in-situ deflection of the ceramic substrate caused by the temperature increase. The experimental results confirm the ability of the simulation model to accurately predict the deflection within an error of only 7.3 %.

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Section: Discussion and Future Workmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Evaluation of in situ Thermomechanical Stress–Strain in Power Modules Using Laser Displacement Sensors

Jørgensen

Munk‐Nielsen

Uhrenfeldt

2021

IEEE Trans. Power Electron.

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“…V CE-on is an important characteristic parameter for condition monitoring [28]. Generally, a 5% increase of V CE-on is taken as a failure standard [29]. A power cycling test of a single-chip module was carried out by Jiang et al and the V CE-on variation as shown in Figure 2b was obtained.…”

Section: Fretting Wear Degradationmentioning

confidence: 99%

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Liu

Yao

et al. 2022

IET Power Electronics

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Press-pack insulated gate bipolar transistor modules (PP-IGBTs) have been widely used in high-voltage and high-power-density applications, such as high-voltage direct-current (HVDC) converters, because of their advantages of low thermal resistance, double side cooling, and short-circuit failure mode. Package failure is one of the main reasons for IGBT module failure. Package condition monitoring is the key to realizing modules fault diagnosis, condition prediction, and intelligent operation and maintenance. At present, a variety of characteristic parameters, such as on voltage and junction temperature, are used in package condition monitoring. However, the characteristic parameters show different variation laws under different package degradation modes. Therefore, the relationship between package degradation modes and characteristic parameters is the key to realizing the condition monitoring, so as to improve the reliability of the power electronic system. In this paper, first, the package structure of a PP-IGBT is analyzed. Second, the mechanisms of fretting wear degradation, gate-oxide degradation, spring degradation, lid warping degradation, micro arcing degradation, short-circuit failure, and open-circuit failure are reviewed. The variation laws of characteristic parameters under each degradation and failure mode are then investigated. Finally, three difficult problems including characteristic parameter measurement, especially pressure monitoring, high-sensitivity detection, and characterization and evaluation, are discussed and analyzed.

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“…Mainly, if the change in collector-emitter voltage (V CE ) or thermal resistance (R th ) exceeds a certain limit (e.g., 5-20% [30]), it indicates a failure/fracture in the IGBT. According to [31], a slight change in the initial collector-emitter voltage was observed due to the solder lead degradation by comparing a new IGBT with an aged IGBT. The threshold gate voltage (V GE_th ) may also vary during the degradation process, which can disrupt normal switching characteristics and reduce the operating frequency [32].…”

Section: Introductionmentioning

confidence: 99%

“…They found that fracture/cracks in the bond wires would increase this voltage. Jia et al [31] investigated the impact of solder layer degradation on the V CE voltage. They claimed that the solder degradation will cause an increase in operating temperature, which can change the electrical (V CE ) and thermal (junction-to-case thermal resistance R th(j-c) ) characterizations of the IGBT over time.…”

Section: Introductionmentioning

confidence: 99%

Practical Challenges of High-Power IGBT’s I-V Curve Measurement and Its Importance in Reliability Analysis

et al. 2021

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This paper examines the practical challenges of simplified setups aimed at achieving high-power IGBTs’ IC–VCE curve. The slope of this I–V curve (which is defined as on-resistance RCE) and the point where the VCE–VGE curve visibly bends (threshold gate voltage) can be suitable failure precursor parameters to determine an IGBT’s health condition. A simplified/affordable design for these specific measurements can be used for in-situ condition monitoring or field testing of switching devices. First, the possible I–V curve measurement methods are discussed in detail in order to prevent self-heating. The selected design includes two IGBTs in which the high-side IGBT was the device under test (DUT) with a constant gate voltage (VGE) of 15 V. Then, the low-side IGBT was switched by a short pulse (50 μs) to impose a high-current pulse on the DUT. The VCE–VGE curve was also extracted as an important failure-precursor indicator. In the next stage, a power-cycling test was performed, and the impact of degradation on the IGBT was analyzed by these measurement methods. The results show that after 18,000 thermal cycles, a visible shift in I–V curve can be seen. The internal resistance increased by 13%, while the initial collector-emitter voltage and voltage at the knee point in the VCE–VGE curve slightly changed. It is likely that in our case, during the performed power-cycling test and aging process, the bond wires were most affected, but this hypothesis needs further investigation.

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Impact of Solder Degradation on V _CE of IGBT Module: Experiments and Modeling

Cited by 33 publications

References 25 publications

Evaluation of in situ Thermomechanical Stress–Strain in Power Modules Using Laser Displacement Sensors

Evaluation of in situ Thermomechanical Stress–Strain in Power Modules Using Laser Displacement Sensors

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Practical Challenges of High-Power IGBT’s I-V Curve Measurement and Its Importance in Reliability Analysis

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Impact of Solder Degradation on V CE of IGBT Module: Experiments and Modeling

Cited by 33 publications

References 25 publications

Evaluation of in situ Thermomechanical Stress–Strain in Power Modules Using Laser Displacement Sensors

Evaluation of in situ Thermomechanical Stress–Strain in Power Modules Using Laser Displacement Sensors

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Practical Challenges of High-Power IGBT’s I-V Curve Measurement and Its Importance in Reliability Analysis

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Impact of Solder Degradation on V _CE of IGBT Module: Experiments and Modeling