Impact of Temperature on Thick Photoresist Lithography Process of Glass Microfluidic Chip

Abstract

The positive photoresist AZ4620 was used for thick photoresist lithography of glass microfluidic chip. Different test temperature of soft baking, post exposure baking, hard baking, impacted the surface quality of photoresist layer, the adhesion of photoresist and glass matrix, the photoresist tolerance time, the etching rate and the maximum etching depth. The results show that the soft-bake temperature of 80°C improves the adhesion of the photoresist and the glass substrate well; PEB (post exposure bake) temperature of 60~70°Chelps to the quality of graphics after development; hard bake temperature of 80~90°Ccan conducive to a larger etching depth; through the controlling of heating temperature and mixing rate, it effectively improves the etching rate, increases the etching depth as well. It has been applied to the fast and high-volume production of a certain microfluidic detection chips.