Impact of TID on latch up induced by pulsed irradiation in CMOS circuits

Li, Ruibin; He, Chaohui; Chen, Wei; Li, Junlin; Wang, Chenhui; Wang, Guizhen; Qi, Chao; Yang, Shanchao; Jin, Xiaoming; Liu, Yan

doi:10.1016/j.nimb.2018.11.036

Nuclear Instruments and Methods in Physics Research Section B:

2019

DOI: 10.1016/j.nimb.2018.11.036

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Impact of TID on latch up induced by pulsed irradiation in CMOS circuits

Ruibin Li

Chaohui He

Wei Chen

et al.

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Cited by 7 publications

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Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation

Chen

et al. 2019

Microelectronics Reliability

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Impact of TID on latch up induced by pulsed irradiation in CMOS circuits

Cited by 7 publications

References 7 publications

Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation

Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation

Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors

Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters

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