Impact of TiO2 buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films

Vandana, .; Gupta, Vinay; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

doi:10.1007/s00339-021-04552-3

Cited by 7 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the crystallinity of LNO/PZT/IGZO heterostructure, as shown in figure 6, it is revealed that both the PZT and IGZO have shown good crystallinity. For IGZO film, this heating temperature is fit for crystallization [17], but for PZT film, the crystallization temperature is always above 600 °C [18]. The good crystallization of both PZT and IGZO may be attributed to the UV irradiation during the gel film formation.…”

Section: Resultsmentioning

confidence: 93%

Fabrication of Pt/InGaZnO/PZT/LNO hetero-structure by one-step photochemical method

Yue²,

Eka³

et al. 2022

Mater. Res. Express

View full text Add to dashboard Cite

The transparent InGaZnO (IGZO) film was fabricated on the surface of PZT film by photochemical sol-gel method, hence more UV light can penetrate IGZO film reaching the IGZO/PZT junction and produce photo-induced charge carrier to obtain a high photocurrent. To decrease the crystalline temperature of PZT film, and simplify the fabrication process, the UV photochemical treatment of IGZO and PZT happened at the same time. During photochemical process, the organic agents of both IGZO and PZT gel film were decomposed greatly, forming an active metal-oxygen bond, which facilitate crystallization at a low temperature. The obtained IGZO film show a uniform surface with homogeneous particles, the obtained Pt/IGZO/PZT/LNO hetero-structure shows a good photoelectric property.

show abstract

Section: Resultsmentioning

confidence: 93%