2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) 2014
DOI: 10.1109/s3s.2014.7028237
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Impact of ultra-low voltages on single-event transients and pulse quenching

Abstract: Single-event transients (SET) and pulse quenching are analyzed at sub-Vt and super-Vt voltage levels. Two different inverter designs are simulated for their single-event response. These simulations show that SET pulse widths become longer with decreasing voltage for the inverter designed to work at sub-Vt voltage levels. Additionally, pulse quenching becomes significant between 0.5 V and 0.7 V for the standard 2-T inverter.

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Cited by 7 publications
(12 citation statements)
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“…4(a), the average pulse widths for each target are displayed as a function of the supply voltage for direct-hit SETs, when the active node is in the more sensitive state "1." As the supply voltage decreases, the average pulsewidth increases in both Au and Ca experiments, in agreement with results reported in [3]- [6], [11], [12], and [17]. At 1-V supply voltage, the distinction between SETs from Ca and Au experiments is clearly seen.…”
Section: Resultssupporting
confidence: 90%
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“…4(a), the average pulse widths for each target are displayed as a function of the supply voltage for direct-hit SETs, when the active node is in the more sensitive state "1." As the supply voltage decreases, the average pulsewidth increases in both Au and Ca experiments, in agreement with results reported in [3]- [6], [11], [12], and [17]. At 1-V supply voltage, the distinction between SETs from Ca and Au experiments is clearly seen.…”
Section: Resultssupporting
confidence: 90%
“…Our measurement setup enables us to simultaneously capture the response of multiple nodes for every ion hit, as well as to track the ion-hit location. This allows us to replicate a scenario similar to that used in previously reported 3-D simulations [7], [11], [12], [16], where both responses of a node that is hit (active node) and the subsequent node in the inverter chain (passive node) are being observed. We will refer to SETs from these nodes as "direct-hit" and "indirect" SETs, respectively.…”
Section: Resultsmentioning
confidence: 98%
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“…Previous work on a Schmitt trigger SET characterization circuit used in this work was originally described with supporting simulations [13] and with data being presented on a 65-nm version of the test structure [14]. Due to the aforementioned high noise margin present in a Schmitt trigger inverter during super-Vt operation, SETs are not able to propagate in a Schmitt trigger above a certain voltage.…”
Section: Design Of the Subthreshold Single-event Transient Characmentioning
confidence: 99%