Pulse quenching induced by multi-collection effects in 45 nm silicon-on-insulator technology

Artola, L.; Hubert, G.

doi:10.1088/0268-1242/31/12/124002

Cited by 7 publications

(5 citation statements)

References 30 publications

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“…The modeling of the charge diffusion accounts for the ambipolar diffusion mechanisms and recombination processes [16]. The modeling of the charge collection accounts for the dynamic transport and the multi-charge collection mechanisms (charge sharing, pulse quenching [13] [16]), the bias voltage, the layout, the bipolar amplification, the shallow trench isolation (STI) and the fabrication process. In the case of this work, the low substrate coupling effect induced by the bulk FinFET technology is taking into account at electrical level.…”

Section: See Prediction Toolmentioning

confidence: 99%

Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology

Aguiar

Artola

Hubert

et al. 2017

Microelectronics Reliability

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Radiation-induced soft error is an ever-increasing concern in the microelectronic industry in order to provide reliable VLSI systems at advanced technology nodes. Most of the redundancy-based methodologies adopt majority voters to ensure the fault masking. This paper presents a comparative analysis of different Majority Voter designs in 7nm FinFET under radiation effects. The MUSCA SEP3 tool is used to estimate the SER of each circuit. Results show that NOR voter is less sensitive than the NAND voter. However, the SET pulse width is larger for the NOR voter than NAND voter.

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Section: See Prediction Toolmentioning

confidence: 99%

Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology

Aguiar

Artola

Hubert

et al. 2017

Microelectronics Reliability

View full text Add to dashboard Cite

show abstract

“…Particularly in sub-micron technologies, charge sharing effects have been observed in digital [4], [19] and analog [12], [13], [15], [20] circuits. This can cause multiple errors by a single ion strike or even pulse quenching in ion-induced transients, resulting in a reduced overall sensitivity of the system against SEE [12], [13], [15], [20], [21].…”

Section: Analogmentioning

confidence: 99%

“…Given the fact that transistors of the differential stage were laid out to maximize device matching, it is logical to consider charge sharing effects as observed in digital [4], [6], [19], [41], [42] and analog circuits [20], [43], [44] built in sub-micron technologies. In fact, charge sharing has been proposed as a mechanism to desensitize sections of analog circuits and evaluated through laser experiments [10], [12], [13], [45].…”

Section: A Experimental Observation Of Charge Sharingmentioning

confidence: 99%

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Fontana

Pazos

Aguirre

et al. 2019

IEEE Trans. Nucl. Sci.

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In this work, charge sharing effects on Analog Single Event Transients are experimentally observed in a fully-custom designed, 180nm CMOS Operational Amplifier by means of a heavy-ion microbeam. Sensitive nodes of the differential stage showed bipolar output transients that cannot be explained by single node collection for the closed loop characteristics of the circuit under test. Layout of these transistors are consistent with charge sharing effects due to deposited charge diffusion. Implementation of linear modeling and simulations of multiple node collection between paired transistors of the input stage showed great coincidence with the obtained experimental waveforms, shaped as bipolar, quenched pulses. These effects are also observed due to dummy transistors placed in the layout.A simple parametrization at the simulation level is proposed to reproduce the observed experimental waveforms. Results indicate that charge-sharing effects should be taken into account during simulation-based sensitivity evaluation of analog circuits, as pulse quenching can alter the obtained results, and linear modeling is a simple approach to emulate simultaneous charge collection in multiple nodes by applying superposition principles, with aims of hardening a design.

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“…This design specificity impacts the drive current of the floating nodes of the DFF. The floating nodes are known as potential critical areas for the occurrence of SEU in digital devices [3], [10], [11]. Fig.…”

Section: A Architecture and Design Dependence Of The Seu Sensitivitymentioning

confidence: 99%

Impact of D-Flip-Flop Architectures and Designs on Single-Event Upset Induced by Heavy Ions

Artola¹,

Hubert²,

Ducret³

et al. 2018

IEEE Trans. Nucl. Sci.

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This work highlights the impact of design on the single event upset (SEU) sensitivity of D-Flip-Flops used in a readout circuit (ROIC) under heavy ions. New experimental data obtained at University of Louvain for several designs are presented. The SEE prediction tool MUSCA SEP3 is used to investigate the failure occurrences at the circuit level as a function of the design. In some cases, design specificities allow for increasing in the SEU robustness of the DFF. However, it appeared that cryogenic temperatures limit the impact of the design on the SEU sensitivity of DFFs. The results show a very limited impact of the temperature on the SEU occurrence, independent of the layout. These results are consistent with experimental data presented in recent works regarding SET and SEFI. These results allow for performing irradiation tests of CMOS IR detector (ROIC) at room temperature instead of cooling down the device during the SEE measurements.

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Pulse quenching induced by multi-collection effects in 45 nm silicon-on-insulator technology

Cited by 7 publications

References 30 publications

Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology

Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology

Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp

Impact of D-Flip-Flop Architectures and Designs on Single-Event Upset Induced by Heavy Ions

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