Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor

Tan, Qiuhong; Wang, Jinbin; Zhong, Xiangli; Zhou, Yue; Wang, Qianjin; Zhang, Yi; Zhang, X.; Huang, Shuai

doi:10.1109/ted.2011.2157348

Cited by 7 publications

(5 citation statements)

References 14 publications

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“…In order to further understand how the defects influence the physical characteristics of the device, the P - E hysteresis loops and I DS - V GS curve for the SWCNT/BNT/HfO 2 -FeFET and SWCNT/BNT-FeFET were simulated by considering asymmetric charge caused by defects using our previous models [ 12 , 28 ]. An asymmetric charge caused by defects is considered to simulate the P - E hysteresis loops and I DS - V GS curve of BNT, and a symmetrical charge is considered to simulate that of BNT/HfO 2 .…”

Section: Resultsmentioning

confidence: 99%

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

et al. 2018

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Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10−9 A/cm2 at a gate voltage of − 3 V.

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Section: Resultsmentioning

confidence: 99%

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

et al. 2018

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“…The nanostructured ZnO nanowires and nanorods based devices have attracted considerable interest due to their importance in potential applications such as electronic, optoelectronics, electrochemical, electromechanical nano devices [31] and biosensing [32]. Many other applications have been reported for the ZnO based nanostructures, thin films and devices, such as transparent electronics [33], UV light emitters [34], piezoelectric devices [35], p-n junctions [36], field effect devices [37], sensors [38], optoelectronics [39], and field emission devices [40].…”

Section: Zno Nanostructured Materialsmentioning

confidence: 99%

Review of Recent Advances of ZnO Nanowires Based Sensors

Nahhas¹

2020

AJN

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This paper presents the recent advances of the ZnO nanowires based sensors. ZnO has gained a substantial interest in the research areas of the wide band gap semiconductors due to its unique electrical, optical and structural properties. ZnO is considered as one of the major candidates for several electronic and photonic applications. ZnO is considered as a potential contender in optoelectronic applications such as solar cells, surface acoustic wave devices, and ultraviolet (UV) emitters. ZnO as a nanostructured material exhibits many advantages for nanodevices. ZnO nanostructured material has the ability to absorb the UV radiation. ZnO nanowires have received a considerable attention due to the morphological changes with doping. ZnO nanowires are very attractive material for nano-sensors due to their properties induced by the quantum size effects. Recently, ZnO nanowires based devices have gained much attention due to their various potential applications in nanoelectronics devices including gas sensors, nanogenerators, and nano-lasers. The recent aspects of ZnO nanowires based sensors devices are presented and discussed.

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“…There are several applications were reported based on ZnO based nanomaterials. These applications include the transparent electronic devices [29], the UV light emitters [30], the piezoelectric devices [31], the p-n junction devices [32], the field effect devices [33], the sensors [34], the optoelectronics [35], and the field emission devices [36].…”

Section: Zno Nanostructured Materialsmentioning

confidence: 99%

Introductory Chapter: Overview of ZnO Based Nano Materials and Devices

Nahhas¹

2019

Zinc Oxide Based Nano Materials and Devices

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Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor

Cited by 7 publications

References 14 publications

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Review of Recent Advances of ZnO Nanowires Based Sensors

Introductory Chapter: Overview of ZnO Based Nano Materials and Devices

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