Impact of ZnTe, SbZnTe and SnZnTe absorber materials for multi-layered solar cell: Parametric extraction and layer wise internal analysis

Mahmoud

Journal of Materials Research

2022

Quantum dots of Cd0.18Zn0.14Te0.68 thin films of various thicknesses are deposited on a glass substrate using inert gas condensation and characterized using many techniques. Structural analysis confirms the cubic polymorph of the thin films. The particle size increased from 5.7 to 10.35 nm as the film thickness increased from 10 to 100 nm. Bandgap calculations show two direct allowed transitions, one of which is 1.8 eV for different thicknesses. The other transition changes from the ultra-violet region (3.7 eV) for 10 nm thickness to yellow (2 eV) for 100 nm thickness, depending on the particle size. This result suggests that this material is suitable for use in multiple absorption layers of the same material rather than multilayers of different materials in tandem solar cells. The optical linear and nonlinear parameters highly depend on the particle size. Electrical conductivity shows intrinsic conduction with low activation energies from ambient temperature to 336 K. Graphical abstract

Section: Introductionmentioning

confidence: 99%

Tuning structural, electrical, linear, and nonlinear optical properties of cadmium zinc telluride quantum dot thin films

Mahmoud

Journal of Materials Research

2022

ECS J. Solid State Sci. Technol.

“…These organic devices are promising alternates of inorganic devices as they contain unique combination of mechanical advantage of polymers along with electronic benefits of semiconductors. [1][2][3][4][5] These salient properties provide robustness, large area fabrication, flexibility, inexpensiveness, lightweight etc. to organic devices.…”

mentioning

confidence: 99%

Impact of Varying Position and Ratio of Charge Generation Layer on Performance Parameters of Organic Photodiode

Yadav,

Mittal,

Negi

2024

Self Cite

Organic photodiodes have emerged as the best alternative to inorganic devices during the last decade. Herein, a highly efficient organic photodiode having charge generation layer (CGL) is demonstrated. This charge generation layer is a combination of HAT-CN (hexaazatriphenylene-hexacarbonitrile) and TAPC (1,1-bis[(di-4-tolyamino)phenyl)]cyclohexane) materials which generate electrons and holes, correspondingly. Moreover, in this work, the proposed device (D2) is compared with other four non-CGL (D1) and CGL based (D3, D4 and D5) devices. In all the CGL based devices, positional variation of the CGL layer is incorporated. In the proposed device (D2), the CGL is situated outside the active layer in such a manner like HAT-CN is placed near acceptor and TAPC is near donor layer. In this way, the proposed device is showing the remarkable improvements in terms of photocurrent and dark current as 134.2 nA and 10.2 nA, respectively. The value of photocurrent of D2 is 34 times increased of the reference device (D1). Furthermore, on comparing with other CGL based devices D3, D4 and D5, photocurrent of D2 is approx 1.6, 1.4 and 9 times enhanced, correspondingly. Moreover, the thickness optimization and internal analysis of the proposed device are also performed to show the novelty of the presented work.

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Ali,

Haque,

Hossain

et al. 2023

J Appl Electrochem

Zinc telluride (ZnTe) is considered as a favorable photovoltaic (PV) material for its desirable absorption coe cient, improved conversion e ciency, and consequently inexpensive production material requirements. The unsuitability of the solar cell structure and band alignment at the buffer/absorber and absorber/BSF interface as well as carrier recombination at the front and back metal contact prevents the probable result from being achieved. The principal objective of this research is to improve the performance of newly designed Al/ZnO/CdS/ZnTe/In 2 Te 3 /Pt solar cell and to investigate the in uence of the Indium telluride (In 2 Te 3 ) back surface eld (BSF) layer on the performance parameters of open circuit voltage (V oc ), short circuit current (J sc ), ll factor (FF), and power conversion e ciency (PCE). This simulation analyses the performance of the baseline structure Al/ZnO/CdS/ZnTe/Pt which is consider as without BSF and the proposed structure Al/ZnO/CdS/ZnTe/In 2 Te 3 /Pt which is consider as with BSF. The thickness, carrier density and bulk defect density of every layer, defect density at BSF/absorber and buffer/absorber interface, working temperature, back surface recombination velocity (SRV) as well as shunt and series resistance has been studied using SCAPS-1D simulator. The PCE has been achieved 20.20% with V OC of 2.008 V, J SC of 10.99 mA/cm 2 and FF of 91.92% for the proposed solar cell with In 2 Te 3 BSF layer by using thicknesses of around 30 nm, 30 nm, 500 nm and 100 nm for ZnO, CdS, ZnTe, and In 2 Te 3 , respectively. The present study provides the guidelines for the realization of high e ciency and thin ZnTe based solar cell in cost effective way. research using the SCAPS-1D software.