Impacts of Co doping on ZnO transparent switching memory device characteristics

Abstract

The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

“…Moreover, their application in devices, such as field-effect transistors, 19,20 ultraviolet (UV) photosensors, 21,22 UV light-emitting diodes, 23 glucose sensors, 24,25 varistors, 26 gas sensors, 27 laser diodes, 28 surface acoustic wave (SAW) devices, 29 solar cells, 30,31 memory devices, 32,33 and field emission (FE) devices, 34 is promising. In recent years, FE devices have gained widespread attention for their application in flat-panel displays and other electronic devices, such as microwave amplifiers, high-brightness electron-source X-ray tubes, cathode-ray tube monitors, and electron microscopes.…”

Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

“…[26][27][28][29] Different mechanisms have been reported on the explanation of the ERSM behaviour, of which the trap-controlled space-charge-limited current (SCLC) is widely adopted. [30][31][32] Other mechanisms including (1) the migration of ionic defects, such as the oxygen vacancies, for RRAM based on the oxide materials, resulting in the modulation of the effective thickness of the highly conductive oxide layer that contains the oxygen vacancies; [33][34][35] (2) the formation of metal ionic conducting filaments (because of the diffusion and rupture of metal ions injected from the electrodes) for organic-material-based RRAM; [36][37][38] and (3) the electrochemical metallization process for composite-oxide-based RRAM, whereby the metal ions are dissolved in redox reactions from electrochemically active electrodes. 39,40 It is important to note that some ultrathin-film-or ultra-short-wire-based devices were found to exhibit ERSM behaviour, and although several above mechanisms including SCLC have been used to explain their ERSM behaviour, it is still not clear which mechanism is the dominant one.…”

Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

“…27 Simanjuntak, et al doped cobalt into ZnO resistive memory devices, compensating for the native defects, thus improving the RS performance. 28 Yang and coworkers fabricated the Ag/ZnO:Mn/Pt device with a high HRS/ LRS resistance ratio. 29 The role of c-axis texture of ZnO thin lms on ZnO based RRAMs has been studied by Pt/ZnO/Ru device.…”