Narrowing the band gap to enhance the resistive switching properties of Pr³⁺-doped ZnO thin films by Cd-ion doping

Abstract

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

Systematic Evolution of Optical Bandgap and Local Chemical State in Transparent MgO and HfO2 Resistive Switching Materials

“…[24,28] The wide bandgap indicates the potential of two distinct stable states during the resistive switching transition of oxide in ReRAM memory devices. [30,31] The higher transmittance offers the capability of optical switching, which makes MgO suitable for optically activated memory applications, similar to HfO 2 . [1] Moreover, the electrical characterization of MgO thin film, sandwiched between two metal layers, confirmed the bipolar switching phenomenon over an applied voltage sweep like the HfO 2 metal-oxide-metal stack.…”

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

“…The order of values of α is close to that of the gold filament (for positive bias) and oxygen vacancy-based filament (for negative bias). 85,86 These results indicate that during positive bias, the Au filament was formed, and during negative bias, the oxygen vacancy-based filament was formed in the Au/IC/ITO device between the two electrodes to drive the device from the HRS to LRS.…”

ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

“…From the linear fitting results (Figure 8), the value of α has been determined to be 5.73 × 10 −4 K −1 which is very close to that of oxygen-vacancy-based conducting filaments. 60,61 These results indicate that, in the presence of ZnO, the conducting filaments are primarily composed of oxygen vacancies.…”

“…59 The filament formation in the presence of ZnO may be due to the presence of ZnO-induced oxygen vacancy as described in the following section. 60,61 In order to explore the nature of the conduction channels, values of R LRS has been extracted from the I−V responses of devices D 1 and D 2 at various temperatures. The average values of R LRS have been plotted as a function of the temperature for both devices.…”