Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics

Effect of an Oxide Cap Layer and Fluorine Implantation on the Metal-Induced Lateral Crystallization of Amorphous Silicon

“…4 In most published work, the Ni is defined either by a lift-off process [5][6][7][8][9] or by Ni deposition in a window opened in a cap layer, which is normally deposited silicon dioxide.…”

“…1 For MILC, nickel reacts with amorphous silicon (α-Si) to form nickel disilicide and the lateral transport of Ni induces crystallization of the adjacent amorphous silicon, 2,3 creating a crystallized region with low Ni contamination suitable for high performance transistors. 4 In most published work, the Ni is defined either by a lift-off process [5][6][7][8][9] or by Ni deposition in a window opened in a cap layer, which is normally deposited silicon dioxide. [10][11][12][13][14][15] So far, no work has been reported that compares the effect of these two different Ni definition techniques on the lateral crystallization.…”