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We investigated an N-type III–V FinFET with a 25-nm In0.53Ga0.47As channel and a 300-nm In0.52Al0.48As barrier layer on an InP substrate. The In0.52Al0.48As barrier layer is used to suppress leakage current from the InP substrate and the 10-nm Al2O3 film deposited by atomic layer deposition (ALD) can be a robust gate dielectric to mitigate interface traps. The on to off current ratio is approximately three orders of magnitude, the subthreshold swing (SS) is 350 mV/dec, and the maximum driving current density is 130 μA/μm at VG = 1.5 V for InGaAs FinFET with a fin width of 40 nm and gate length of 200 nm.

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Abstract-In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.Index Terms-Contact etch-stop layer (CESL), poly amorphization implantation (PAI), strain, stress memorization technique (SMT).