Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

Peng, Hao-Kai; Zheng, Sheng-Yen; Kao, Wei-Ning; Lai, Ting-Chieh; Lee, Kai-Sheun; Wu, Yung-Hsien

doi:10.1016/j.apsusc.2023.158788

Applied Surface Science

2024

DOI: 10.1016/j.apsusc.2023.158788

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Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

Hao-Kai Peng,

Sheng-Yen Zheng,

Wei-Ning Kao

et al.

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Cited by 2 publications

References 26 publications

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Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

Dalapati,

Li,

Arulkumaran

et al. 2025

Applied Surface Science

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Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

Dalapati,

Li,

Arulkumaran

et al. 2025

Applied Surface Science

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Deep learning potential model of displacement damage in hafnium oxide ferroelectric films

Chen,

Zhang,

Zhou

et al. 2024

npj Comput Mater

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A model for studying displacement damage in irradiated HfO2 ferroelectric thin films was developed using deep learning and a repulsive table, combining the accuracy of density functional theory with the efficiency of molecular dynamics. This model accurately predicts the properties of various HfO2 phases, such as PO (Pca21), T (P42/nmc), AO (Pbca), and M (P21/c), and describes the atom collision-separation process during irradiation. The displacement threshold energies for the Hf atoms, three-coordinated O atoms, and four-coordinated O atoms are 57.72, 41.93, and 32.89 eV, respectively. The defect formation probabilities (DFPs) for the O primary knock-on atoms (PKAs) and Hf PKAs increase with energy, reaching 1. Below 80.27 eV, the O PKAs are more likely to form point defects than the Hf PKAs. Above this energy, the Hf PKAs have a higher DFP because the O PKAs form replacement loops more easily, inhibiting the generation of point defects. This study provides a comprehensive understanding of defect formation, which is crucial for increasing the reliability of HfO2 ferroelectric devices under irradiation.

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Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

Cited by 2 publications

References 26 publications

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

Deep learning potential model of displacement damage in hafnium oxide ferroelectric films

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