IMPATT Diodes Based on 111, 100, and

Abstract

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

“…The principle of operation of IMPATT diode and its negative resistance property is based on impact ionization followed by avalanche multiplication and transit time of charge carriers to cross the depletion layer of the device. Therefore the ionization rates of charge carrier in the semiconductor base material are the key parameters which govern the RF performance of IMPATT oscillators [6]. In the year 1964, Lee et al [7] measured the carrier ionization rates in Si within the field range of 1.8 × 10 7 -4.0 × 10 7 V m −1 by deriving those from photo-injection experiments on p − n diodes.…”