“…in non-volatile ferroelectric random access memory (FE-RAM) [1][2][3][4]. SrBi 2 Ta 2 O 9 ferroelectric has been extensively investigated as a promising candidate for nonvolatile ferroelectric random access memories, because of high fatigue endurance (up to 10 11 to 10 12 switching cycles), good retention characteristics, low switching fields, and low leakage current [5][6][7][8].…”