2011
DOI: 10.1016/j.jallcom.2011.04.121
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Impedance analysis of thermally modified SrBi2(Nb0.5Ta0.5)2O9 ceramics

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Cited by 14 publications
(3 citation statements)
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“…in non-volatile ferroelectric random access memory (FE-RAM) [1][2][3][4]. SrBi 2 Ta 2 O 9 ferroelectric has been extensively investigated as a promising candidate for nonvolatile ferroelectric random access memories, because of high fatigue endurance (up to 10 11 to 10 12 switching cycles), good retention characteristics, low switching fields, and low leakage current [5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…in non-volatile ferroelectric random access memory (FE-RAM) [1][2][3][4]. SrBi 2 Ta 2 O 9 ferroelectric has been extensively investigated as a promising candidate for nonvolatile ferroelectric random access memories, because of high fatigue endurance (up to 10 11 to 10 12 switching cycles), good retention characteristics, low switching fields, and low leakage current [5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…Bismuth layer-structured ferroelectrics (BLSFs) have attracted much attention due to their potential application in ferroelectric non-volatile random access memory [1][2][3][4][5][6][7]. The BLSFs are composed of layers of pseudo-perovskite blocks (A n−1 B n O 3n+1 ) 2− interleaved with bismuth oxide (Bi 2 O 2 ) 2+ layers along the pseudo-tetragonal c-axis.…”
Section: Introductionmentioning
confidence: 99%
“…Niobium compounds cover a large class of diverse materials whose applications include: catalysts [13][14][15], photoluminescence [16], microwave dielectric ceramics [17][18][19][20][21][22][23][24][25]. However, only limited work focused on the structure of Nb 2 O 4 (SO 4 ) [26].…”
Section: Introductionmentioning
confidence: 99%