Impedance of photosensitive nanocrystalline PbTe(In) films

Komissarova, T. A.; Khokhlov, D. R.; Ryabova, L. I.; Dashevsky, Z.; Kasiyan, V.

doi:10.1103/physrevb.75.195326

Cited by 28 publications

(30 citation statements)

References 2 publications

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“…C 0 = ε 0 S/d is a geometry capacitance of the sample, where ε 0 is a dielectric constant of vacuum, S -a capacitor plate area, d -a distance between capacitor plates. Analysis of the impedance spectra at temperature variation and under illumination allowed to conclude that the high frequency branch of the hodograph is determined by the grain barriers and the low frequency branch corresponds to the transport along the inversion channels [3].…”

Section: Resultsmentioning

confidence: 99%

Low-temperature charge transport in photosensitive nanocrystalline PbTe(In) films

Dobrovolsky

Dashevsky

Kasiyan

et al. 2009

J. Phys.: Conf. Ser.

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Abstract.We have investigated conductivity of the PbTe(In) nanocrystalline films in dc and ac modes at temperatures 4.2-300 K in the frequency interval 20 Hz -1 MHz in darkness and under illumination. Conductivity of the as-grown films is determined by charge transport along the inversion channels at the grain surface and activation (or tunneling) through the grain barriers. Persistent photoconductivity appears in the films due to spatial separation of nonequilibrium charge carriers at temperatures lower 150 K. As grown films have been annealed in oxygen at 300 o C and 350 o C. Oxidation at 300 o C leads to resistivity increase, grain barrier height growth and higher photoresponse . Annealing at 350 o C results in resistivity reduction and photoresponse decrease. The main contribution to charge transport at low temperature in this case is related to the hopping conductivity along the inversion channels.

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Section: Resultsmentioning

confidence: 99%

Low-temperature charge transport in photosensitive nanocrystalline PbTe(In) films

Dobrovolsky

Dashevsky

Kasiyan

et al. 2009

J. Phys.: Conf. Ser.

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“…Two branches in the impedance spectrum of these films may be attributed to transport along the inversion channels and through barriers at grain boundaries [7,11]. Since the frequencies f max corresponding to the Z'' maxima in two different branches of the impedance spectra differ by about two orders of magnitude (Fig.…”

Section: Ac Electric Transportmentioning

confidence: 98%

“…Development of nanotechnology in the recent years gives new opportunities for optimization of IRdetectors and lasers [2,3], optical storage [4] and thermoelectric [5] devices based on lead telluride structures. Doping is a functional method allowing modification of properties of such structures [5][6][7]. Due to high dielectric constant (ε ~ 1000), the crystal lattice of PbTe is strongly polarized around a charged defect centre giving rise to impurity -lattice correlation processes [1].…”

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confidence: 99%

Transport properties and photo‐ conductivity of nanocrystalline PbTe(In) films

Dobrovolsky

Chernichkin

Belogorokhov

et al. 2010

Phys. Status Solidi (c)

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Microstructure, charge transport and photoelectric properties are studied for PbTe(In) films deposited on amorphous substrates kept at different temperatures Ts during deposition. All the films have a column‐like structure with the mean column diameter increasing from 60 nm at the lowest Ts = ‐120 °C up to 300 nm at the maximal Ts = 250 °C. The substrate temperature increase results in appearance of a preferred orientation of grains and in an inversion of the conductivity type from hole to electron. Electric transport and photoelectric properties of the films were studied in the temperature interval 4.2 – 300 K in DC and AC modes at frequencies varied from 20 Hz up to 1 MHz. The impedance spectra analysis was done in terms of the equivalent circuit model. Modification of charge transport mechanisms is correlated with the variation of microstructure of the films grown at different substrate temperatures. Films with disordered grains possess all features of non‐homogeneous systems, while the films with a preferred orientation of grains are analogous to PbTe(In) single crystals in their transport and photoelectric properties. Mechanisms of the persistent photoconductivity observed in the films are qualitatively distinguished. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Such model was proposed and successfully applied to explain photoelectrical properties of thin polycrystalline PbTe films. 22,23 The capacitance of conducting inversion layers depends on the width of the spacecharge region and the built-in potential. Upon illumination, the free-carrier concentration in the grains' bulk increases.…”

Section: (D)mentioning

confidence: 99%

Mechanism forp-type conduction in polycrystalline indium oxide films

2012

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We report results of ac impedance measurements which we have obtained from intrinsic indium oxide films under UV irradiation and in darkness. We find two distinct contributions to the ac conductivity. One of them is brought about by grain boundaries, and the other one by inversion layers, which are on grain surfaces. In addition, we have found that photocurrents relax extremely slowly in these films. All of this fits consistently within a model in which mobile holes in inversion layers are responsible for recently reported p-type dc conductivity.

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Impedance of photosensitive nanocrystalline PbTe(In) films

Cited by 28 publications

References 2 publications

Low-temperature charge transport in photosensitive nanocrystalline PbTe(In) films

Low-temperature charge transport in photosensitive nanocrystalline PbTe(In) films

Transport properties and photo‐ conductivity of nanocrystalline PbTe(In) films

Mechanism forp-type conduction in polycrystalline indium oxide films

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