Impedance properties of high-frequency pin diodes

Lebedev, I. V.; Shnitnikov, A. S.; Dyakov, I.V.; Borisova, N.A.

doi:10.1016/s0038-1101(97)00258-x

Cited by 11 publications

(2 citation statements)

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“…The high-frequency characteristic of the PIN diode plays an important role in microwave application. The typical equivalent circuit model is described in [15,16]. The base width of the i-region is divided into two main regions: depleted and undepleted.…”

Section: Piezotronic Pin Diode For Microwave Devicesmentioning

confidence: 99%

Piezotronic PIN diode for microwave and piezophototronic devices

Luo

Zhang

2017

Semicond. Sci. Technol.

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Piezotronic and piezophototronic, the two emerging fields that combine piezoelectric and semiconductor properties of materials have drawn much attention recently. Piezopotential caused by the piezo-charges can change energy band and carrier transport of piezoelectric semiconductor materials. The p-in diodes have been widely used in high frequency microwave circuit. In this paper, we present the theoretical calculations of piezotronic p-in diode, including the built-in-potential, current-voltage characteristic, and junction capacitance for microwave and radio frequency application. Furthermore, the photovoltaic and luminescence properties of p-in piezophototronic photodetector and light emitting diode have been provided under applied strain.

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Section: Piezotronic Pin Diode For Microwave Devicesmentioning

confidence: 99%

Piezotronic PIN diode for microwave and piezophototronic devices

Luo

Zhang

2017

Semicond. Sci. Technol.

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“…But for the frequency of 600 MHz, the modified simulation method is more accurate than ADS. In that case, an interesting nonlinear phenomenon, named bistability effect [16][17][18], occurs. As illustrated in Figure 4(b), the output power increases almost linearly with the input power.…”

Section: The Power Limiting and Bistability Characteristicsmentioning

confidence: 99%

Nonlinear Characteristics of P-I-N Diode Circuits Analyzed by a Physically Based Simulation Method

Wang¹,

Wang²,

Liu³

et al. 2017

PIER Letters

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Abstract-Nonlinear characteristics of semiconductor devices play a key role in the performances of circuits, but their modelling is still a big challenge in circuit simulations nowadays. This paper explores modelling nonlinear characteristics of circuits containing semiconductor devices by presenting a modified physically based simulation method. A p-i-n diode microstrip circuit is taken as a sample, and its nonlinear characteristics, such as the power limiting, bistability, and forward recovery characteristics, are simulated and analysed. The applied method demonstrates its good capability and accuracy of modelling the nonlinear characteristics in the simulation, and moreover clarifies the underlying physical mechanisms. In contrast, the Advanced Design System (ADS) software, a popular circuit simulation program based on the equivalent circuit model, fails to reveal some of those nonlinear characteristics.

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