Piezotronic PIN diode for microwave and piezophototronic devices

Luo, Lu; Zhang, Yan; Li, Lijie

doi:10.1088/1361-6641/aa5ca1

Cited by 9 publications

(3 citation statements)

References 16 publications

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“…ZnO is a wide direct band gap semiconductor of 3.374 eV at 300 K, having high thermal conductivity, electronic mobility, and large exciton binding energy of 60 meV. , Therefore, it has attracted a strongly increasing interest since it can be applied in electronic and optoelectronic devices including a field effect transistor, , nanogenerator, resistive switching, , gas sensor, − memory, , photodetector, − and piezoelectric diode. − For nanostructured ZnO with a very large surface-to-volume ratio and typical n-type properties, however, dangling bonds can induce quantities of acceptor-type surface states due to a breaking of lattice periodicity on its surface, resulting in a band bending upward and a carrier-depletion layer in the vicinity of surfaces, and correspondingly a surface barrier-related diode can be formed. ,, Moreover, high densities of surface states can give rise to Fermi-level pinning, and hence, its interface barrier is independent of metal work function and semiconductor electron affinity. For ZnO nanostructure-based devices with a high surface barrier, it is, therefore, difficult to conduct at a low operation bias, showing a high resistance state (HRS) ,,, In addition, quantities of defects, such as oxygen vacancy (V o ) and zinc interstitial (Zn i ), exist in ZnO lattice, resulting in the formation of traps with different levels.…”

Section: Introductionmentioning

confidence: 99%

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes

Wang

Zhao

Tong

et al. 2019

ACS Appl. Mater. Interfaces

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ZnO nanostructures are exceedingly important building blocks for nanodevices due to their wide band gap and large exciton binding energy. However, their electronic transport characteristics are unstable and unrepeatable with external environment variation. Here, we demonstrate that electron transport of an individual ZnO nanowire-based device with the two same electrodes can be controllably modulated by applying a relatively large uni-/bidirectional bias. After being modulated, moreover, their electrical properties can well be maintained at relatively low operation bias and room temperature, demonstrating a memory behavior. The presence of surface states related to lattice periodicity breaking and traps associated with oxygen vacancy (Vo) and zinc interstitial (Zni) deep-level defects plays a crucial role in tunable electron transport with a memory feature. For the single nanowire-based two-terminal device, two back-to-back connected surface barrier diodes with series resistance are formed. The filling and emptying of traps near two end electrodes can remarkably adjust the width and height of the surface barrier. At a relatively low bias, the unmodulated conductance is governed by the electron hopping of bulk traps since the height of emptied traps is higher than that of the surface barrier, whereas at a relatively large bias, it is dominated by thermion emission due to a dramatic decrease of the surface barrier width resulting from the electron injection into traps from a negative electrode. Moreover, it will be beneficial for a thin surface barrier to penetrate UV light and separate photoexcited electron–hole pairs. After being asymmetrically modulated by a unidirectional injection, it can be successfully applied to realize a self-driven UV photodetector based on a photovoltaic effect in the symmetrical two-electrode structure. Our work provides a new route to tune electrical properties of nanostructures, which may inspire the development of novel electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes

Wang

Zhao

Tong

et al. 2019

ACS Appl. Mater. Interfaces

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“…Zhang et al also further investigated the modulation of the piezoelectric polarization charges using the theory of heterojunctions [ 63 ]. Luo et al performed theoretical calculations on piezoelectric PIN diodes to improve the device system of piezoelectric electronics [ 64 ]. Jin et al advanced their work to the small-signal dynamic characterization of the piezotronic effect by studying the diffusion capacitance and conductivity of piezoelectric p-n junctions under external compressive stress at low and high frequencies [ 65 ].…”

Section: Piezotronics Based On Zno Nanowiresmentioning

confidence: 99%

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

et al. 2022

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The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human–machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal–semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms’ analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

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“…The current-voltage curves of piezotronic metalsemiconductor contact are shown in figure 1(b). Furthermore, the piezotronics PIN structure diode has been demonstrated for high-frequency applications in microwave devices [30].…”

Section: Fundamental Theory and Device Physics Of Piezotronics And Pi...mentioning

confidence: 99%

Theory of piezotronics and piezo-phototronics

et al. 2018

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Piezotronic PIN diode for microwave and piezophototronic devices

Cited by 9 publications

References 16 publications

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

Theory of piezotronics and piezo-phototronics

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