Impedance spectroscopy and dielectric analysis in KH2PO4 single crystal

Chen, R. H.; Yen, Chen Chieh; Shern, Ching-Song; Fukami, T.

doi:10.1016/j.ssi.2006.05.053

Cited by 96 publications

(28 citation statements)

References 22 publications

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“…The KDP family compounds (MH 2 PO 4 ; M=K, Cs, Rb, NH 4 ) are interesting for many reasons [1][2][3][4][5][6]. In particular, CsH 2 PO 4 (CDP ) as a fuel cell electrolyte at temperatures so-called superprotonic behaviour present an abrupt, several-order-ofmagnitude jump in its proton conductivity upon heating above the temperature Ttr≈508 K [7].…”

Section: Introductionmentioning

confidence: 99%

Thermal analysis, Raman spectroscopy and complex impedance analysis of Cu2+-doped KDP

Ettoumi

Gao

Toumi

et al. 2013

Ionics

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Raman spectroscopy and differential thermal analysis (DTA) and thermogravimetric analysis have been carried out on Cu-doped KH 2 PO 4 (Cu-KDP). X-ray diffraction powder data reveal that the structure of the KDP crystal does not change with the additive Cu 2+ ion. DTA analysis and Raman study of Cu-KDP as a function of temperature reveal that this compound undergoes two phase transitions at about Ttr =453 and 473 K. The electrical conductivity measurements on polycrystalline pellet of Cu-KDP (5) are performed from room temperature (RT) up to 495 K. Only one phase transition is observed at 470 K. The activation energy in the migration is 0.42 eV in the temperature range from RT to 470 K. For temperature above 470 K, the activation energy of the superprotonic phase is 1.87 eV.

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Section: Introductionmentioning

confidence: 99%

Thermal analysis, Raman spectroscopy and complex impedance analysis of Cu2+-doped KDP

Ettoumi

Gao

Toumi

et al. 2013

Ionics

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“…As a result, M' increases to a maximum asymptotic value M(∞) = 1/ε(∞). The spectra of M'' show a slightly asymmetric peak centred in the dispersion region of M', which is typical of hopping ion conductivity [9].…”

Section: Resultsmentioning

confidence: 92%

Dielectric properties of Aurivillius-type Bi4-xGdxTi3O12 ceramics

Palaimienė¹,

Banys²,

Khomchenko³

et al. 2013

Lith. J. Phys.

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The present work is aimed for dielectric investigation of undoped and gadolinium-substituted Aurivilliusstructure bismuth titanates Bi 4 Ti 3 O 12 (BIT) and Bi 2.5 Gd 1.5 Ti 3 O 12 (BGT). The measurements were performed as a function of both frequency and temperature in the frequency range of 20 Hz -1 MHz and in the temperature range of 30-1100 K. Obtained results can be divided into two parts: the low temperature part, where the glass like dispersion occurs, and the high temperature part, where high electrical conductivity dominates. The activation energies for the presumably oxygen vacancies migration-related conductivity is E A = 0.73 eV for Bi 4 Ti 3 O 12 and E A = 0.98 eV for Bi 2.5 Gd 1.5 Ti 3 O 12 [1].

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“…Accordingly, physical polarization processes and ionic conduction occur when crystals are heated. Conduction mechanisms have been observed in these crystals and they happen due to the hopping effect during the protons migration across hydrogen ions vacancies in the crystalline lattice 6,8,9 . Some authors reported about three types of defects, which, in this case, lead to the electric conduction that involves the movement or jump of hydrogen ions between the constituent's bonds in the crystal bulk.…”

Section: Resultsmentioning

confidence: 99%

“…Some authors reported about three types of defects, which, in this case, lead to the electric conduction that involves the movement or jump of hydrogen ions between the constituent's bonds in the crystal bulk. Furthermore, the movement of hydrogen, potassium, and ammonium ions contribute to the increase in the electrical conductivity at higher temperature 8,9,12,13 . The electrical conductivity results are shown by complex impedance Z * (ω) of the KDP, ADP, and mixed crystals in Figure 1.…”

Section: Resultsmentioning

confidence: 99%

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Electrical Conductivity in the KDP, ADP, and K1-x(NH4)xH2PO4 Crystals

Souza

2017

Mat. Res.

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. 076, 0.118, 0.357, 0.857, 0.942) crystals with increasing temperature. They were grown by solvent evaporation method. Zview simulation software was used to theoretically fit electrical conductivity results as a function of frequency (1-10 6 Hz) and temperature (20-160 ºC) with equivalent circuits. These dielectric-type materials become ionic conductors upon heating. Proton jumps in hydrogen bonds, heavier ions migration (K + and NH 4 + ), and rotation and reorientation of ammonium groups contributed to electrical conduction. This conduction behavior follows the Arrhenius equation with which the activation energies were determined at different temperature ranges. For ADP-rich (x > 0.8) and pure ADP crystals the conductivities are higher than those for KDP-rich (x < 0.2) and pure KDP. Lattice defects may reduce electrical conductivities in the crystals with intermediate x composition. Complex permittivity ac and complex conductivity ac were also obtained for these crystals.

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Impedance spectroscopy and dielectric analysis in KH2PO4 single crystal

Cited by 96 publications

References 22 publications

Thermal analysis, Raman spectroscopy and complex impedance analysis of Cu2+-doped KDP

Thermal analysis, Raman spectroscopy and complex impedance analysis of Cu2+-doped KDP

Dielectric properties of Aurivillius-type Bi<sub>4-<i>x</i></sub>Gd<sub><i>x</i></sub>Ti<sub>3</sub>O<sub>12</sub> ceramics

Electrical Conductivity in the KDP, ADP, and K1-x(NH4)xH2PO4 Crystals

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