Imperfections and their passivation in halide perovskite solar cells

Chen, Bin; Rudd, Peter N.; Yang, Shuang; Yuan, Yongbo; Huang, Jinsong

doi:10.1039/c8cs00853a

Cited by 1,512 publications

(1,355 citation statements)

References 167 publications

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“…We also observed higher level of Pb defects in the samples with 2D incorporated in the bulk compared to the control sample and samples with surface coating by fitting the Pb 4f spectra (Figure S13d,e, Supporting Information). We speculate that these Pb defects are under‐coordinated Pb on the surface, which might lead to more surface recombination in the films …”

Section: Resultssupporting

confidence: 90%

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Pham

Kho

Phang

et al. 2020

Advanced Energy Materials

122

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Mixed‐dimensional perovskite solar cells combining 3D and 2D perovskites have recently attracted wide interest owing to improved device efficiency and stability. Yet, it remains unclear which method of combining 3D and 2D perovskites works best to obtain a mixed‐dimensional system with the advantages of both types. To address this, different strategies of combining 2D perovskites with a 3D perovskite are investigated, namely surface coating and bulk incorporation. It is found that through surface coating with different aliphatic alkylammonium bulky cations, a Ruddlesden–Popper “quasi‐2D” perovskite phase is formed on the surface of the 3D perovskite that passivates the surface defects and significantly improves the device performance. In contrast, incorporating those bulky cations into the bulk induces the formation of the pure 2D perovskite phase throughout the bulk of the 3D perovskite, which negatively affects the crystallinity and electronic structure of the 3D perovskite framework and reduces the device performance. Using the surface‐coating strategy with n‐butylammonium bromide to fabricate semitransparent perovskite cells and combining with silicon cells in four‐terminal tandem configuration, 27.7% tandem efficiency with interdigitated back contact silicon bottom cells (size‐unmatched) and 26.2% with passivated emitter with rear locally diffused silicon bottom cells is achieved in a 1 cm2 size‐matched tandem.

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Section: Resultssupporting

confidence: 90%

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Pham

Kho

Phang

et al. 2020

Advanced Energy Materials

122

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“…As a result, the shallow level traps are in a dominant position while the contribution from deep level traps becomes negligible, which greatly improve the response rate . Such modulation of defect‐induced trap states can be further supported by the photoluminescence (PL) lifetime measurements, as shown in Figure S12 (Supporting Information). The PL lifetime shows a monotonic increase from 0.029 to 0.086 ns with the increase of Se composition (2 x ) from 0 to 1.08.…”

Section: Resultsmentioning

confidence: 76%

Controllable Synthesis of Crystalline ReS₂₍₁₋_x₎Se₂_x Monolayers on Amorphous SiO₂/Si Substrates with Fast Photoresponse

Kang

Nan

Zhang

et al. 2019

Advanced Optical Materials

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Re‐based transition metal dichalcogenides (TMDs) and alloys have many unusual features such as in‐plane anisotropic optical, electrical, and phonon properties and thus receive increasing research interest. However, the distorted 1T structure and the weaker interlayer coupling easily cause anisotropic growth and out‐of‐plane growth, making it particularly challenging to produce Re‐based TMD and alloy monolayers on amorphous SiO2/Si substrates. Here, a reliable method is developed for the synthesis of high‐quality and large‐size ReS2(1−x)Se2x monolayer crystals on SiO2/Si substrates by NaCl‐assisted, confined‐space chemical vapor deposition. The synergy of salt assistance with the confined reaction space facilitates the formation of intermediate metal oxychlorides and creates a relatively stable growth environment, finally leading to the successful synthesis of ReS2(1−x)Se2x monolayer crystals on SiO2/Si substrates. The as‐grown ReS2(1−x)Se2x monolayer alloys exhibit continuously variable composition, high crystal quality, and uniform distribution of Re, S, and Se elements. Furthermore, the ReS2(1−x)Se2x based photodetectors display good photoresponse to visible and near‐infrared light with a fast response of less than 15 ms. The salt‐assisted, confined‐space chemical vapor deposition provides a reliable way for the synthesis of large‐scale low‐lattice symmetry 2D materials on amorphous SiO2/Si substrates and opens up new prospects for Re‐based TMDs and alloys in optoelectronic devices.

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“…In particular, the power conversion efficiency of HOIP solar cells has rapidly increased from 3.8 % to 25.2 % in recent years, close to that of single‐crystalline silicon solar cells . Nevertheless, HOIP solar devices are still a long way from the Shockley–Queisser efficiency limit owing to intrinsic defects that serve as nonradiative recombination centers and induce charge and energy losses …”

Section: Introductionmentioning

confidence: 99%

Extending Carrier Lifetimes in Lead Halide Perovskites with Alkali Metals by Passivating and Eliminating Halide Interstitial Defects

et al. 2020

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Defects, such as halide interstitials, act as charge recombination centers, induce degradation of halide perovskites, and create major obstacles to applications of these materials. Alkali metal dopants greatly improve perovskite performance. Using ab initio nonadiabatic molecular dynamics, it is demonstrated that alkalis bring favorable effects. The formation energy of halide interstitials increases by up to a factor of four in the presence of alkali dopants, and therefore, defect concentration decreases. When defects are present, alkali metals strongly bind to them. Halide interstitials introduce mid‐gap states that rapidly trap charge carriers. Alkalis eliminate the trap states, helping to maintain high current density. Further to charge trapping, the interstitials accelerate charge recombination. By passivating the interstitials, alkalis make carrier lifetimes up to seven times longer than in defect‐free perovskites and up to thirty times longer than in defective perovskites.

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Imperfections and their passivation in halide perovskite solar cells

Abstract: Perovskite solar cells to date are made of polycrystalline films which contain a high density of defects. Imperfection passivation to reduce non-radiative recombination and suppress ion migration could improve device efficiency and device stability.

Cited by 1,512 publications

References 167 publications

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Controllable Synthesis of Crystalline ReS₂₍₁₋_x₎Se₂_x Monolayers on Amorphous SiO₂/Si Substrates with Fast Photoresponse

Extending Carrier Lifetimes in Lead Halide Perovskites with Alkali Metals by Passivating and Eliminating Halide Interstitial Defects

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Imperfections and their passivation in halide perovskite solar cells

Abstract: Perovskite solar cells to date are made of polycrystalline films which contain a high density of defects. Imperfection passivation to reduce non-radiative recombination and suppress ion migration could improve device efficiency and device stability.

Cited by 1,512 publications

References 167 publications

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

High Efficiency Perovskite‐Silicon Tandem Solar Cells: Effect of Surface Coating versus Bulk Incorporation of 2D Perovskite

Controllable Synthesis of Crystalline ReS2(1−x)Se2x Monolayers on Amorphous SiO2/Si Substrates with Fast Photoresponse

Extending Carrier Lifetimes in Lead Halide Perovskites with Alkali Metals by Passivating and Eliminating Halide Interstitial Defects

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Product

Resources

About

Controllable Synthesis of Crystalline ReS₂₍₁₋_x₎Se₂_x Monolayers on Amorphous SiO₂/Si Substrates with Fast Photoresponse