Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film

“…Physical approach for InSb is based on high thermal mobilities of In and Sb atoms in Si/SiO 2 heterostructures and their segregation at the grain boundary. Particularly as it was shown in the works (7,8) In atoms implanted in Si or SiO 2 layers segregate to the interface between them at the annealing temperatures >800 o C. The same behavior was observed for Sb atoms, but only in the case of implantation in silicon, because in SiO 2 these atoms are relatively immobile (9,10). Subsequent implantation of Sb and In atoms in silicon at high concentration allows to nucleate crystalline InSb embryo's at the defects in implanted layer (11).…”

Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy

“…The choice for InSb is based on the high thermal mobilities of In and Sb-atoms in Si/SiO 2 heterostructures and their segregation to the grain boundary. Particularly as it was shown by Chen et al (7,8) In-atoms implanted in Si or SiO 2 layers segregate to the interface between them at annealing temperatures > 800 o C. The same behavior was observed for Sb-atoms, but only in the case of implantation in silicon, because in SiO 2 these atoms are relatively immobile (9,10). Subsequent implantation of Sb and In-atoms in silicon at high concentration allows to nucleate crystalline InSb embryo's at the defects 88 in the implanted layer (11).…”