Implant damage evaluation at high energy and low dose ion implantation using white defect of CCD image sensor

Kanazaki, Emi; Iwawaki, Naoki; Kawase, Fumitoshi; Shibata, Satoshi

doi:10.1109/iwjt.2009.5166231

Cited by 5 publications

(8 citation statements)

References 2 publications

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“…Otherwise, residual defects are transformed to be new kind of defects during thermal treatment processes in the Back End of Line for Si device' manufacturing (300-600 • C). They may cause the crucial problems of the device's performance, especially for the CCD and/or CMOS image sensors [8], [9]. Notably, if the top temperature of additional FA is set at 700 • C, the diffusion of impurities is not so much, that is, not enough to be a problem with the devices.…”

Section: Discussionmentioning

confidence: 99%

“…These defects were identified as small numbers of point defects. However, they may cause the crucial problems of the device's performance, especially for the CCD and/or CMOS image sensors [8], [9]. These image sensors are mainly fabricated by low-dose implantation processes, and their properties are quite sensitive to the crystal defects due to their scattering of carriers.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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We investigated the thermal behavior of defects remaining in low-dose (<10 13 cm −2 ) arsenic-and boronimplanted Si after high-temperature (1100 • C) rapid thermal annealing (RTA). The defects remaining after RTA were characterized as vacancy-type defects, and confirmed to be created by nonequilibrium states that occur during the extremely rapid cooling step of the RTA sequence. They were gradually removed by applying additional furnace annealing (FA) (i.e., thermal equilibrium heating process) at 300-400 • C. At the range of 500-600 • C, however, carbon-and oxygen-related point defects were newly created. These defects were confirmed to be eliminated at 700 • C, and the crystal quality was significantly improved. When using a rapid thermal process for heat treatment after low-dose impurity implantation, it is necessary to apply an equilibrium thermal treatment at >700 • C to remove residual damage as well as to activate impurities.Index Terms-Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Sagara

Uedono

Shibata

2015

IEEE Trans. Semicond. Manufact.

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“…This damage non-uniformity at the batch type is explained using another experimental result in Figure 11 and Figure 12 [ 23 ]. Figure 11 shows the configuration of the disk, the wafer and the beam spots.…”

Section: Damagementioning

confidence: 84%

A Review of Ion Implantation Technology for Image Sensors †

Teranishi

Fuse

Sugitani

2018

Sensors

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Ion implantation technology is reviewed mainly from the viewpoint of image sensors, which play a significant role in implantation technology development. Image sensors are so sensitive to metal contamination that they can detect even one metal atom per pixel. To reduce the metal contamination, the plasma shower using RF (radio frequency) plasma generation is a representative example. The electrostatic angular energy filter after the mass analyzing magnet is a highly effective method to remove energetic metal contamination. The protection layer on the silicon is needed to protect the silicon wafer against the physisorbed metals. The thickness of the protection layer should be determined by considering the knock-on depth. The damage by ion implantation also causes blemishes. It becomes larger in the following conditions if the other conditions are the same; a. higher energy; b. larger dose; c. smaller beam size (higher beam current density); d. longer ion beam irradiation time; e. larger ion mass. To reduce channeling, the most effective method is to choose proper tilt and twist angles. For P+ pinning layer formation, the low-energy B+ implantation method might have less metal contamination and damage, compared with the BF2+ method.

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“…Ion Implant damage can also increase the level of white defects within CCD image sensors [1]. This damage is most evident with single wafer implanters and less of an issue for batch systems [2].…”

Section: Introductionmentioning

confidence: 99%

“…Defect control was made a top priority and the system is equipped with a state-of-the-art beam modulation mechanism to reduce beam damage to photodiodes [1]. …”

Section: Introductionmentioning

confidence: 99%

SEN Ultra-High Energy Implanter (UHE) Developed for Next Generation Image Sensors

Suetsugu

Tsukihara²,

Fuse

et al. 2011

AIP Conference Proceedings

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The UHE is an ultra-high energy implanter developed by SEN Corporation. It was derived from the NV-GSD-HE3 by adding six RF resonators to the beam line. This extends performance so that singly charged boron ions can reach 2 MeV with beam current of 0.75 mA. The maximum energy for triple charged boron is 5 MeV with beam current of 1pA. For phosphorus ions, the UHE can accelerate doubly charged ions up to 4.4 MeV with beam current of 0.35 mA and quadruply charged ions up to 8 MeV with beam current of 1 pA. The primary application of the UHE is the image sensor market where it is used to increase the depth of CCD photodiodes into the surface of the wafer and thereby permit higher pixel density for image sensors. The second purpose is to improve productivity for relatively high boron doses at energies around 3 MeV. In order to address certain CCD defects, the system includes a state-of-the-art beam profile controller which allows optimization of implant damage and micro-uniformity. The ULE is currently used in production of high-end CCD's.

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Implant damage evaluation at high energy and low dose ion implantation using white defect of CCD image sensor

Cited by 5 publications

References 2 publications

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

A Review of Ion Implantation Technology for Image Sensors †

SEN Ultra-High Energy Implanter (UHE) Developed for Next Generation Image Sensors

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