Thermal Behavior of Residual Defects in Low-Dose Arsenic- and Boron-Implanted Silicon After High-Temperature Rapid Thermal Annealing

Abstract

We investigated the thermal behavior of defects remaining in low-dose (<10 13 cm −2 ) arsenic-and boronimplanted Si after high-temperature (1100 • C) rapid thermal annealing (RTA). The defects remaining after RTA were characterized as vacancy-type defects, and confirmed to be created by nonequilibrium states that occur during the extremely rapid cooling step of the RTA sequence. They were gradually removed by applying additional furnace annealing (FA) (i.e., thermal equilibrium heating process) at 300-400 • C. At the range of 500-600 • C, however, carbon-and oxygen-related point defects were newly created. These defects were confirmed to be eliminated at 700 • C, and the crystal quality was significantly improved. When using a rapid thermal process for heat treatment after low-dose impurity implantation, it is necessary to apply an equilibrium thermal treatment at >700 • C to remove residual damage as well as to activate impurities.Index Terms-Residual damage, ion implantation, rapid thermal annealing (RTA), silicon.

Recrystallization model of discrete amorphous regions in C3H5-molecular-ion-implanted silicon substrate surface analyzed by X-ray photoelectron spectroscopy

“…Many large amorphous regions remain after RTA at 600 °C for 1 s, however, the number and size of amorphous regions further decrease after RTA for 6 s. Finally, disordered regions completely disappear after RTA for 10 s. In previous study, Sagara et al revealed the residual defect formation in arsenic and boron implanted substrate after high temperature RTA process by low-temperature cathodoluminescence. 24) However, we confirm that there are no residual damage or defects in the substrate surface after the subsequent RTA process on the TEM view.…”

Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

“…[9][10][11] Recently, detailed thermal behavior of residual damage in low-dose arsenic (As) and boron (B) implanted Si, after high-temperature rapid thermal annealing (RTA), has been investigated using cathode luminescence (CL). [12][13][14] However, most of these characterization techniques require sample preparation and restrict sample size. A non-destructive (hopefully non-contact, as well) characterization technique, without special sample preparation and sample size limitation, is desired for in-line monitoring of potential process and/or equipment related problems.…”

“…[12][13][14] The defects remaining after RTA were characterized to be vacancy-type defects created during extremely rapid (nonequilibrium) cooling steps of the RTA sequence. Additional thermal equilibrium (or isothermal) heating in a furnace-type system, even at 300∼400…”