Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

Yoo, Woo Sik; Yoshimoto, Masahiro; Sagara, A.; Shibata, Satoshi

doi:10.1149/2.0011508ssl

Cited by 14 publications

(19 citation statements)

References 23 publications

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“…With the introduction of photoluminescence (PL) imaging and spectrum analysis, a noncontact, purely optical technique is now available for spatially resolved electrical characterization. 5,6 Qualitative raw room temperature photoluminescence (RTPL) imaging and spectrum analysis of various types of Si wafers, such as; single crystalline Si wafers, 7 epitaxial Si wafers, 8 bonded single crystalline Si wafers, 9 implanted single crystalline Si wafers, [10][11][12] plasma processed single crystalline Si, [13][14][15][16] single crystalline Si on oxide (SOI) wafers, 17 Si implanted oxide (SIMOX) wafers 18 and microcrystalline-Si (mc-Si) wafers sliced from bricks 6,19 has been examined. Correlation has been demonstrated between RTPL intensity and various characteristics of Si wafers, such as distribution of defects, contamination, implant damage, plasma damage, interface quality, impurities, bulk lifetime etc.…”

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confidence: 99%

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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Photoluminescence (PL) spectra from lightly boron (B) doped p − -Si(100) under 488.0 nm Ar + ion laser excitation over the temperature range of 22 K-290 K is presented. Change of PL peak height (maximum intensity), peak position, peak area (areal intensity), full-width-at-half-maximum (FWHM: peak width) were determined as a function of temperature. PL intensity was sharply decreased with temperature increase in the temperature range of 22 K -170 K and then slowly increased again in the temperature range of 170 K-290 K. Phonon replicas of a relatively sharp band-to-band (or band edge (BE)) PL peak were clearly measured at low temperatures (≤90 K). PL spectra became broader and the phonon replicas were barely distinguishable as the temperature was increased. The envelope of the main PL peak and the broadening of peak width with the Si temperature were qualitatively in good agreement with the Maxell-Boltzmann probability distribution function. The direction of peak position shift with Si temperature change was also in good agreement with the temperature dependence of the Si bandgap. All measured PL spectra were curve fitted using combinations of modified Gaussian function(s) and standard Gaussian function(s). A simplified curve fitting method for broad PL spectra, consisting of the BE peak and band tail peak, using an exponentially modified Gaussian (EMG or ExGaussian) function and a number of standard Gaussian functions, was proposed from a practical usage point of view. Radiative recombination processes in Si and potential industrial applications of the PL characterization technique were discussed. For the characterization of electrical behaviors of Si, resistivity, carrier concentration, mobility and Hall effect measurements were routinely inspected during wafer fabrication and incoming quality control at the wafer fabs.1 A number of noncontact characterization techniques, such as microwave detected photoconductance decay (μ-PCD)1,2 and inductively coupled quasi-steady-state photoconductance (QSSPC), 1,3 have been used for in-line monitoring of contamination and process induced modulation of electrical behaviors of Si. Steady state PCD measurement techniques 4 enabled by improved laser technology were recently introduced.With the introduction of photoluminescence (PL) imaging and spectrum analysis, a noncontact, purely optical technique is now available for spatially resolved electrical characterization. For industrial applications, the ease of measurement without special sample preparation is important. This is especially true for in-line monitoring applications in semiconductor device manufacturers. PL measurements at room temperature (RT) are preferred. However, the RTPL spectra from Si are generally very broad and it is difficult to identify the origin of variations in RTPL spectra. In this paper, temperature dependence of PL spectra from lightly boron (B) doped p − -Si(100) was measured in the temperature range of 22 K-290 K and the effect of temperature on the change of PL spectra was investigated. Practic...

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confidence: 99%

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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“…In addition, the RTPL intensity of the double epitaxial Si wafer at both excitation levels was lower than that of the single epitaxial Si wafer. Yoo and coworkers [ 40 , 41 ] reported that the RTPL intensity due to band-to-band emission is very sensitive to the number of implantation defects that are electrically activated in the Si wafer. C 3 H 6 -ion-implantation defects were formed at a depth of approximately 5 μm from the wafer surface, in this study.…”

Section: Resultsmentioning

confidence: 99%

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Onaka‐Masada

Kadono

Okuyama

et al. 2020

Sensors

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The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

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“…2,3,5,[9][10][11] Figure 3a shows 650 nm excited RTPL spectra from the 75 s annealed wafers at temperatures between 350…”

Section: Resultsmentioning

confidence: 99%

Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence

Yoo¹,

Jeon

Kim

et al. 2015

ECS J. Solid State Sci. Technol.

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Phosphorous (P + 1.0 MeV, 4.0 × 10 13 cm −2 ) and boron (B + 10 keV, 3.0 × 10 14 cm −2 ) implanted p − -Si(100) wafers were annealed with a wide range of annealing conditions (350-800 • C, 60-150 s) in a commercially available hot wall-based, rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed in different RTA conditions. Secondary ion mass spectroscopy (SIMS) P and B depth profiles did not show significant change. Room temperature photoluminescence (RTPL) spectra were measured from all wafers under two different excitation wavelengths (650 and 785 nm). RTPL spectra showed large variations in intensity and wavelength distribution corresponding to the sheet resistance. © The Author Conventional methods of noncontact monitoring for as-implanted Si are Therma-Probe and Rutherford backscattering spectroscopy (RBS). Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) are also used for dose, depth profile, and implant damage characterization. After electrical activation by thermal treatment of implanted Si, sheet resistance (Rs) measurements using four point probes are mainly used for monitoring implanted dopant activation. However, the four point probes require physical contact and relatively large area (typically one or more orders of magnitude wider than the probe spacing) of uniform quality (poor spatial resolution) for meaningful measurements. SIMS, RBS and TEM are also used as complementary crystal quality and defect verification techniques after implanted dopant activation.1-4 However, the conventional characterization techniques often overlook problems due to their insensitivity to surface passivation quality, residual implant damage and defects. 5Development of a noncontact, high spatial resolution implant activation monitoring technique is desired. Photoluminescence (PL) from Si is a good candidate for this application.Room temperature photoluminescence (RTPL) of crystalline Si, at wavelength ∼1.1 μm corresponding to interband transitions, is very sensitive to the density of non-radiative bulk and surface defects. 1,6 This can be used as an indication of defect concentration in Si. Monitoring of surface defect formation during oxidation processes and minor carrier diffusion length of epitaxial Si by RTPL intensity has been reported previously. 7,8 Promising results of spectroscopic RTPL studies on (ultra-) shallow implanted junctions and high energy low dose implanted junctions have also been reported previously.2,5,9-11 RTPL characterization of non-radiative defect density on surfaces and interfaces of Si with thin oxides have been studied.12-14 Metal contamination monitoring using spectroscopic RTPL has been reported previously.15 Plasma process induced damage (PPID) and plasma process chamber mismatch monitoring were also demonstrated using RTPL characterization of Si wafers. [16][17][18] In this paper, RTPL was investigated as a potential noncontact electrical activation monitoring technique for implant annealed Si wafers. The major...

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Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

Cited by 14 publications

References 23 publications

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence

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