Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence

Yoo, Woo Sik; Jeon, Bong Seok; Kim, Sang Deok; Ishigaki, Toshikazu; Kang, Kitaek

doi:10.1149/2.0191512jss

Cited by 7 publications

(6 citation statements)

References 21 publications

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“…RTPL studies showed very high sensitivity to surface passivation, native oxide/Si interface quality, 6 dielectrics/Si interface quality, 7 plasma induced damage (PID), 8 etching damage, 9 ultraviolet (UV) induced damage, 10 X-ray induced radiation damage, 11 implant damage, 12,13 metal contamination, 6 minority carrier lifetime. 14 An RTPL study on intentionally iron (Fe) contaminated lightly doped ptype and n-type Si wafers with Fe contamination ranged from 10 9 cm −3 to 10 12 cm −3 showed good correlation between photoconductance decay (PCD) lifetime, SPV diffusion length (DL) and iron readings.…”

Section: Resultsmentioning

confidence: 99%

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Kim

Han

Yoo³

2016

ECS J. Solid State Sci. Technol.

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Occasionally, in volume device manufacturing, a large number of particles may be generated on cleaned Si wafers. Surface (ionic, organic and/or metallic) contamination is generally suspected. However, conventional chemical analysis techniques for contamination are generally not able to distinguish between Si wafers with good and poor particle performance. No suspicious chemicals and elements were detected from any wafers regardless of characterization techniques. Surface photovoltage (SPV) measurement barely showed the differences between wafers with good and poor particle performance. Multiwavelength room temperature photoluminescence (RTPL) showed significant differences in intensity between them, indicating the presence of surface quality variations. Contamination related yield loss is a major failure mode in advanced silicon (Si) device volume manufacturing.1 Silicon wafers are routinely inspected at various stages using in-line and off-line characterization techniques. Incoming wafers are inspected for ionic, inorganic and metal contamination. As device dimensions are shrinking, contamination related device yield loss tends to increase.Conventional incoming wafer contamination test techniques include ion chromatography (IC) for ionic contamination, gas chromatography with flame ionization detector (GC-FID) for organic contamination and inductive coupled plasma-mass spectroscopy (ICP-MS) for metal contamination.2-4 Other X-ray techniques, such as total X-ray fluorescence (TXRF) and wavelength dispersive X-ray fluorescence (WDXRF) techniques, are also used as in-line metal contamination techniques. 4 Most techniques have detection limits in the range of ppm ∼ ppb.2-4 They are not sensitive enough for certain types of process anomalies.In this study, the root cause of a recent incident generating a large number of particle/defects was investigated using surface photovoltage (SPV) 5 and multiwavelength room temperature photoluminescence (RTPL) 6,7 measurements. Figure 1 shows the flow of Si wafer inspection and process steps. The wafers in front opening shipping boxes (FOSBs) were transferred into front opening unified pods (FOUPs). The wafers were cleaned in deionized (DI) water and the surface inspected for particles and defects. Typically, all wafers pass the inspection. Silicon dioxide (SiO 2 ) films were deposited on 300 mm Si (100) wafers in a plasma enhanced chemical deposition (PECVD) system using liquid tetraethyl orthosilicate (TEOS: Si(OC 2 H 5 ) 4 ) as a source of Si. The Si wafers with PECVD SiO 2 films were inspected for particles and defects again. ExperimentalThree batches (A, B and C) of 25 Si wafers (3 × 25 = 75 wafers) with native oxide (SiO 2 /Si) were allocated for this study. Four wafers per batch were used for chemical analyses (IC for ionic contamination, GC-FID for organic contamination and ICP-MS for metal contamination). For SPV measurements, the contact potential difference (or probe potential), V cpd , was mapped under green light-emitting-diode (LED) illumination at a peak wavelen...

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Section: Resultsmentioning

confidence: 99%

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Kim

Han

Yoo³

2016

ECS J. Solid State Sci. Technol.

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“…A fully automated, specially designed spectrograph capable of measuring 300 mm diameter wafers, with a thermoelectrically cooled InGaAs linear diode array (WaferMasters MPL-300) was used for room temperature PL measurements. 4,[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] The 15 mm × 15 mm sized samples were placed at the center of a blanket 300 mm diameter Si wafer. PL area mapping measurements were done over 5 mm × 5 mm areas in 50 μm intervals in both X and Y directions.…”

Section: Methodsmentioning

confidence: 99%

“…For practical reasons, room temperature PL spectroscopy has been proposed by authors and showed very promising results from small Si pieces to 300 mm diameter Si wafers and blanket samples to device wafers from advanced device manufacturers around the world. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In an effort to optimize performance, metal contamination, surface condition, organic contaminant, interface quality, bonding integrity, implant anneal, plasma damage, arching damage, residual mechanical stress and process chamber mismatching problems have been studied by room temperature PL spectroscopy. 4,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In this paper, room temperature PL spectra were measured from MeV ion implanted Si coupons after annealing and findings are discussed in the course of measurement results analysis.…”

mentioning

confidence: 99%

“…[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In an effort to optimize performance, metal contamination, surface condition, organic contaminant, interface quality, bonding integrity, implant anneal, plasma damage, arching damage, residual mechanical stress and process chamber mismatching problems have been studied by room temperature PL spectroscopy. 4,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In this paper, room temperature PL spectra were measured from MeV ion implanted Si coupons after annealing and findings are discussed in the course of measurement results analysis. Effects of implant temperature, backside contamination, localized defects and scribe lines on room temperature PL measurements on silicon are discussed to emphasize sample preparation and handling prior to PL measurements.…”

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Effects of Implant Temperature, Backside Contamination and Scribe Lines on Room Temperature Photoluminescence Measurements on Silicon

Yoo

Ishigaki

Kim

et al. 2021

ECS J. Solid State Sci. Technol.

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To investigate the effect of implantation temperature on the damage to a Si lattice, room temperature photoluminescence (PL) spectra were measured from highly-channeled MeV 11B+ implanted Si wafers with different implant temperatures (25 °C and 450 °C) after annealing at 950 °C for 3 min in N2. Small pieces from the wafers were used for PL characterization. The implanted Si wafer piece at the elevated temperature resulted in higher overall PL intensity under both excitation wavelengths suggesting lesser lattice damage than the Si wafer implanted at room temperature. Unexpectedly large PL intensity variations were observed from PL area mapping of both wafer pieces. In addition, strange behaviors of localized PL intensity variations, with opposite trends between 670 nm and 827 nm excitation PL measurements were observed near the scribe lines and sample number markings on the backside. The PL intensity was increased under 670 nm excitation while it was decreased under 827 nm excitation. Possible reasons for this strange behavior were discussed based on experimental results and analysis. PL measurement is verified to be very sensitive to the surface condition, interface, bulk and backside conditions of the Si. For reliable PL measurement, backside contamination and scratches, such as scribe lines, should be avoided.

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“…Multi-wavelength room temperature photoluminescence (RTPL) and multi-wavelength Raman spectroscopy (MRS) are strong candidates for these applications. Various examples of RTPL and MRS techniques in semiconductor applications have been reported (4)(5)(6)(7)(8)(9)(10). For epitaxial quality characterizations, both MPL and MRS techniques are effective.…”

Section: Introductionmentioning

confidence: 99%

Multi-Wavelength Raman Characterization of Epitaxial Silicon Wafers for In-Line Process Characterization and Monitoring Applications

Yoo¹,

Ishigaki²,

Kang³

2017

ECS Trans.

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We have characterized 200-mm and 300-mm Si wafers with a single epitaxial layer and with a triple epitaxial layer stack atop using multi-wavelength, high-resolution Raman spectroscopy. 96point wafer mapping measurements were performed on all wafers. Statistics of Raman signal intensity, shift and full-width-at-halfmaximum (FWHM) values, under different excitation wavelengths, were extracted and compared with two types of reference Si wafers (prime Si wafers and reclaimed Si wafers). Significant variations in Raman signal intensity, shift and FWHM were measured between reference wafers and epitaxial wafers indicating potential Si lattice stress and crystallinity variations. Excitation wavelength dependence of Raman signal intensity, shift and FWHM also indicated variations in the Si lattice stress and the crystallinity of epitaxial layers in the depth direction. Non-contact multiwavelength Raman spectroscopy was found to be very sensitive to the quality of epitaxial Si layers which makes this technique very effective in complimentary in-line process characterization and monitoring.

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Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence

Cited by 7 publications

References 21 publications

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Effects of Implant Temperature, Backside Contamination and Scribe Lines on Room Temperature Photoluminescence Measurements on Silicon

Multi-Wavelength Raman Characterization of Epitaxial Silicon Wafers for In-Line Process Characterization and Monitoring Applications

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